Recess-Gate AlGaN/GaN HFET

Zhang Zhiguo; Feng Zhen; Yang Mengli; Feng Zhihong; Mo Jianghui; Cai Shujun; Yang Kewu

The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
School of Microelectronics,Xidian University,Xi′an 710071,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China

Article Navigation > Journal of Semiconductors > 2007 > 28(9): 1420-1423

Zhang Zhiguo, Feng Zhen, Yang Mengli, Feng Zhihong, Mo Jianghui, Cai Shujun, Yang Kewu. Recess-Gate AlGaN/GaN HFET[J]. Journal of Semiconductors, 2007, In Press. Zhang Z G, Feng Z, Yang M L, Feng Z H, Mo J H, Cai S J, Yang K W. Recess-Gate AlGaN/GaN HFET[J]. Chin. J. Semicond., 2007, 28(9): 1420.Export: BibTex EndNote

Citation:

Zhang Zhiguo, Feng Zhen, Yang Mengli, Feng Zhihong, Mo Jianghui, Cai Shujun, Yang Kewu. Recess-Gate AlGaN/GaN HFET[J]. Journal of Semiconductors, 2007, In Press.

Zhang Z G, Feng Z, Yang M L, Feng Z H, Mo J H, Cai S J, Yang K W. Recess-Gate AlGaN/GaN HFET[J]. Chin. J. Semicond., 2007, 28(9): 1420.

Export: BibTex EndNote

Citation:

Zhang Zhiguo, Feng Zhen, Yang Mengli, Feng Zhihong, Mo Jianghui, Cai Shujun, Yang Kewu. Recess-Gate AlGaN/GaN HFET[J]. Journal of Semiconductors, 2007, In Press.

Zhang Z G, Feng Z, Yang M L, Feng Z H, Mo J H, Cai S J, Yang K W. Recess-Gate AlGaN/GaN HFET[J]. Chin. J. Semicond., 2007, 28(9): 1420.

Export: BibTex EndNote

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Recess-Gate AlGaN/GaN HFET

The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
School of Microelectronics,Xidian University,Xi′an 710071,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China
The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
National Key Laboratory of ASIC,Shijiazhuang 050051,China

Received Date: 2015-08-18
Accepted Date: 2007-03-20
Revised Date: 2007-04-28
Published Date: 2007-08-31

Abstract

Abstract

A recessed gate AlGaN/GaN HFET with a total gate length of 100μm is studied.The device demonstrates an increase in transconductance from 260.3 to 314.8mS/mm compared to the unrecessed device,while the saturation current changes slightly.Moreover,the ideality is improved from 2.3 to 1.7.An output power density of 11.74W/mm is achieved at 8GHz and 40V using a load pull system.
- AlGaN/GaN HFET,
- recessed gate,
- high voltage,
- high power density

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