J. Semicond. > 2008, Volume 29 > Issue 9 > 1775-1778

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Defects and Properties of Low Dislocation Si-Doped GaAs Single Crystal Grown by the VGF Method

Yu Huiyong, Zhao Youwen, Zhan Rong, Gao Yongliang and Hui Feng

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Abstract: Micro-defects and properties of Si-doped,low resistivity GaAs single crystal grown by the vertical gradient freeze (VGF) method are studied and compared with undoped semi-insulating GaAs grown by VGF and liquid encapsulated Czochralski-grown (LEC) methods.Using the A-B etching microscopy method,micro-precipitated defects in the two materials are compared and their formation mechanism is analyzed.Lattice occupation of Si and B atoms and their complex defects are investigated by photoluminescence spectroscopy.Hall measurement results indicate that there is a strong Si self-compensation in the low resistive Si-doped VGF-GaAs single crystal,resulting in a reduction of n-type doping efficiency.As a result,a high initial doping concentration of Si is used in the process of VGF growth of n-type GaAs,and a large amount of impurity precipitate is formed.This situation is enhanced when a high concentration of B in the VGF grown GaAs exists.An approach to reduce defects and increase doping efficiency is discussed.

Key words: VGFGaAsmicro-defectsingle crystal

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    Received: 18 August 2015 Revised: 19 May 2008 Online: Published: 01 September 2008

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      Yu Huiyong, Zhao Youwen, Zhan Rong, Gao Yongliang, Hui Feng. Defects and Properties of Low Dislocation Si-Doped GaAs Single Crystal Grown by the VGF Method[J]. Journal of Semiconductors, 2008, In Press. Yu H Y, Zhao Y W, Zhan R, Gao Y L, Hui F. Defects and Properties of Low Dislocation Si-Doped GaAs Single Crystal Grown by the VGF Method[J]. J. Semicond., 2008, 29(9): 1775.Export: BibTex EndNote
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      Yu Huiyong, Zhao Youwen, Zhan Rong, Gao Yongliang, Hui Feng. Defects and Properties of Low Dislocation Si-Doped GaAs Single Crystal Grown by the VGF Method[J]. Journal of Semiconductors, 2008, In Press.

      Yu H Y, Zhao Y W, Zhan R, Gao Y L, Hui F. Defects and Properties of Low Dislocation Si-Doped GaAs Single Crystal Grown by the VGF Method[J]. J. Semicond., 2008, 29(9): 1775.
      Export: BibTex EndNote

      Defects and Properties of Low Dislocation Si-Doped GaAs Single Crystal Grown by the VGF Method

      • Received Date: 2015-08-18
      • Accepted Date: 2008-02-29
      • Revised Date: 2008-05-19
      • Published Date: 2008-09-03

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