| Citation: |
Han Zhitao, Chu Jinkui, Meng Fantao, Jin Rencheng. Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator[J]. Journal of Semiconductors, 2009, 30(10): 104008. doi: 10.1088/1674-4926/30/10/104008
Han Z T, Chu J K, Meng F T, Jin R C. Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator[J]. J. Semicond., 2009, 30(10): 104008. doi: 10.1088/1674-4926/30/10/104008.
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Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator
doi: 10.1088/1674-4926/30/10/104008
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Abstract
According to Lambert’s law, a novel structure of photodetectors, namely photodetectors in silicon-on-insulator, is proposed. By choosing a certain thickness value for the SOI layer, the photodetector can absorb blue/violet light effectively and affect the responsivity of the long wavelength in the visible and near-infrared region, making a blue/violet filter unnecessary. The material of the SOI layer is high-resistivity floating-zone silicon which can cause the neutral N type SOI layer to become fully depleted after doping with a P type impurity. This can improve the collection efficiency of short-wavelength photogenerated carriers. The device structure was optimized through numerical simulation, and the results show that the photodiode is a kind of high performance photodetector in the blue/violet region. -
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