| Citation: |
Ji Feng, Xu Jingping, Lai P T, Chen Weibing, Li Yanping. 2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs[J]. Journal of Semiconductors, 2006, In Press.
Ji F, Xu J P, Lai P T, Chen W B, Li Y P. 2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs[J]. Chin. J. Semicond., 2006, 27(10): 1725.
Export: BibTex EndNote
|
2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs
-
Abstract
New boundary conditions and a 2D potential distribution along the channel of a high-k gate-dielectric MOSFET,including both the gate dielectric material region and the depletion region,are given.Based on this distribution,a 2D threshold-voltage model with the fringing-field and short-channel effects is developed for a high-k gate-dielectric MOSFET.The model agrees well with experimental data and a quasi 2D model,and is even more accurate than the quasi 2D model at higher drain voltages.Factors affecting the threshold behavior of the high-k gate-dielectric MOSFET are discussed in detail. -
References
-
Proportional views
DownLoad: