Chin. J. Semicond. > 2006, Volume 27 > Issue 5 > 796-803

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SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm

Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe and Han Zhengsheng

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Abstract: We improve the genetic algorithm by combining it with a simulated annealing algorithm.The improved algorithm is used to extract model parameters of SOI MOSFETs,which are fabricated with standard 1.2μm CMOS/SOI technology developed by the Institute of Microelectronics of the Chinese Academy of Sciences.The simulation results using this model are in excellent agreement with experimental results.The precision is improved noticeably compared to commercial software.This method requires neither a deeper understanding of SOI MOSFETs model nor more complex computations than conventional algorithms used by commercial software.Comprehensive verification shows that this model is applicable to a very large range of device sizes.

Key words: SOIparameter extractiongenetic algorithmsimulated annealing algorithm

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2006

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      Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng. SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm[J]. Journal of Semiconductors, 2006, In Press. Li R Z, Li D L, Du H, Hai C H, Han Z S. SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm[J]. Chin. J. Semicond., 2006, 27(5): 796.Export: BibTex EndNote
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      Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng. SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm[J]. Journal of Semiconductors, 2006, In Press.

      Li R Z, Li D L, Du H, Hai C H, Han Z S. SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm[J]. Chin. J. Semicond., 2006, 27(5): 796.
      Export: BibTex EndNote

      SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm

      • Received Date: 2015-08-20

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