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Defect Control and High Quality Surface Preparation of InP Substrate

Zhao Youwen, Dong Zhiyuan, Sun Wenrong, Duan Manlong, Yang Zixiang and Lü Xuru

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Abstract: Defects and their influence on InP single crystal substrate arc investigated.Results on cluster dislocation and its deterioration on lattice perfection,pit-like micro-defects,residual damage, and impurities and their removal by cleaning are presented.Formation mechanisms of the defects and approaches to suppressing them are discussed.Finally,epi-ready InP polished single crystal wafer with high lattice perfection,free of surface damage,is obtained.

Key words: indium phosphidedefectsubstratepolishing

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    Received: 18 August 2015 Revised: 16 July 2006 Online: Published: 01 December 2006

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      Zhao Youwen, Dong Zhiyuan, Sun Wenrong, Duan Manlong, Yang Zixiang, Lü Xuru. Defect Control and High Quality Surface Preparation of InP Substrate[J]. Journal of Semiconductors, 2006, In Press. Zhao Y W, Dong Z Y, Sun W R, Duan M L, Yang Z X, Lü X. Defect Control and High Quality Surface Preparation of InP Substrate[J]. Chin. J. Semicond., 2006, 27(12): 2127.Export: BibTex EndNote
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      Zhao Youwen, Dong Zhiyuan, Sun Wenrong, Duan Manlong, Yang Zixiang, Lü Xuru. Defect Control and High Quality Surface Preparation of InP Substrate[J]. Journal of Semiconductors, 2006, In Press.

      Zhao Y W, Dong Z Y, Sun W R, Duan M L, Yang Z X, Lü X. Defect Control and High Quality Surface Preparation of InP Substrate[J]. Chin. J. Semicond., 2006, 27(12): 2127.
      Export: BibTex EndNote

      Defect Control and High Quality Surface Preparation of InP Substrate

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      国家自然科学基金

      • Received Date: 2015-08-18
      • Accepted Date: 2006-06-06
      • Revised Date: 2006-07-16
      • Published Date: 2006-12-04

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