| Citation: |
Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, Lu Jing, Ma Jie, Xie Changqing, Yu Zhiping. Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2006, In Press.
Xue L J, Xia Y, Liu M, Wang Y, Shao X, Lu J, Ma J, Xie C Q, Yu Z P. Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT[J]. Chin. J. Semicond., 2006, 27(2): 298.
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Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT
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Abstract
AlGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schrdinger-Poisson-hydrodynamic (HD) systems.The influences of polarization charge and quantum effects are considered in this model.Then the two-dimensional conduction band and electron distribution,electron temperature characteristics,Id versus Vd and Id versus Vg,transfer characteristics and transconductance curves are obtained.Corresponding analysis and discussion based on the simulation results are subsequently given. -
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