Chin. J. Semicond. > 2006, Volume 27 > Issue 3 > 403-408

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Influence of Polarization-Induced Electric Fields on Optical Properties of Intersubband Transitions in AlxGa1-xN/GaN Double Quantum Wells

Lei Shuangying, Shen Bo, Xu Fujun, Yang Zhijian, Xu Ke and Zhang Guoyi

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Abstract: The influence of polarization-induced electric fields on the electron distribution and the optical properties of intersubband transitions (ISBT) in AlxGa1-xN/GaN coupled double quantum wells (DQWs) is investigated by self-consistent calculation.It is found that the polarization-induced potential drop leads to an asymmetric potential profile of AlxGa1-xN/GaN DQWs even though the two wells have the same width and depth.The polarization effects result in a very large Stark shift between the odd and even order subbands,thus shortening the wavelength of the ISBT between the first odd order and the second even order (1odd-2even) subbands.Meanwhile,the electron distribution becomes asymmetric due to the polarization effects,and the absorption coefficient of the 1odd-2even ISBT decreases with increasing polarization field discontinuity.

Key words: AlxGa1-xN/GaN DQWsintersubband transitionpolarization field discontinuity

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2006

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      Lei Shuangying, Shen Bo, Xu Fujun, Yang Zhijian, Xu Ke, Zhang Guoyi. Influence of Polarization-Induced Electric Fields on Optical Properties of Intersubband Transitions in AlxGa1-xN/GaN Double Quantum Wells[J]. Journal of Semiconductors, 2006, In Press. Lei S Y, Shen B, Xu F J, Yang Z J, Xu K, Zhang G Y. Influence of Polarization-Induced Electric Fields on Optical Properties of Intersubband Transitions in AlxGa1-xN/GaN Double Quantum Wells[J]. Chin. J. Semicond., 2006, 27(3): 403.Export: BibTex EndNote
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      Lei Shuangying, Shen Bo, Xu Fujun, Yang Zhijian, Xu Ke, Zhang Guoyi. Influence of Polarization-Induced Electric Fields on Optical Properties of Intersubband Transitions in AlxGa1-xN/GaN Double Quantum Wells[J]. Journal of Semiconductors, 2006, In Press.

      Lei S Y, Shen B, Xu F J, Yang Z J, Xu K, Zhang G Y. Influence of Polarization-Induced Electric Fields on Optical Properties of Intersubband Transitions in AlxGa1-xN/GaN Double Quantum Wells[J]. Chin. J. Semicond., 2006, 27(3): 403.
      Export: BibTex EndNote

      Influence of Polarization-Induced Electric Fields on Optical Properties of Intersubband Transitions in AlxGa1-xN/GaN Double Quantum Wells

      • Received Date: 2015-08-20

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