Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 520-524
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Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’

Li Xianjie, Zhao Yonglin, Cai Daomin, Zeng Qingming, Pu Yunzhang, Guo Yana, Wang Zhigong, Wang Rong, Qi Ming, Chen Xiaojie and Xu Anhuai

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Abstract: The epitaxial structure and growth，circuit design，fabricating process and characterization are described for the photoreceiver oEIC based on InP/InGaAs HBT/PIN photodetector integration scheme.A 1.55μm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/InGaAs HBT process.The InP/InGaAs HBT with a 2μm x 8μm emitter contact showed a DC gain of 40，a DC gain cutoff frequency of 45GHz and a maximum frequency of os. cillation of 54GHz.The integrated InGaAs photodetector exhibited a responsivity of 0.45A/W at A=1.55“m，a dark current less than 10hA at a bias of -5V and a -3dB bandwidth of 10.6GHz.Clear and opening eye diagrams were obtained for a NRZ 2^23一1 pseudorandom code at both 2.5 and 3.0Gb/s.The sensitivity for a bit error ratio of BER=10-9 at 2.5Gb/s is leSS than -15.2dBm.

Key words: InP/InGaAs HBT, PIN, photoreceiVer, OEIC, OEIC

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 520-524
      Li Xianjie, Zhao Yonglin, Cai Daomin, Zeng Qingming, Pu Yunzhang, Guo Yana, Wang Zhigong, Wang Rong, Qi Ming, Chen Xiaojie, Xu Anhuai. Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’[J]. Journal of Semiconductors, 2007, In Press. Li X J, Zhao Y L, Cai D M, Zeng Q M, Pu Y Z, Guo Y N, Wang Z G, Wang R, Qi M, Chen X J, Xu A H. Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’[J]. Chin. J. Semicond., 2007, 28(S1): 520.Export: BibTex EndNote
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      Li Xianjie, Zhao Yonglin, Cai Daomin, Zeng Qingming, Pu Yunzhang, Guo Yana, Wang Zhigong, Wang Rong, Qi Ming, Chen Xiaojie, Xu Anhuai. Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’[J]. Journal of Semiconductors, 2007, In Press.

      Li X J, Zhao Y L, Cai D M, Zeng Q M, Pu Y Z, Guo Y N, Wang Z G, Wang R, Qi M, Chen X J, Xu A H. Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’[J]. Chin. J. Semicond., 2007, 28(S1): 520.
      Export: BibTex EndNote
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      Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’

      • The 13 th Institute of China Electronic Technology Group Corporation，Shijiazhuang 050051，China,The 13 th Institute of China Electronic Technology Group Corporation，Shijiazhuang 050051，China,The 13 th Institute of China Electronic Technology Group Corporation，Shijiazhuang 050051，China,The 13 th Institute of China Electronic Technology Group Corporation，Shijiazhuang 050051，China,The 13 th Institute of China Electronic Technology Group Corporation，Shijiazhuang 050051，China,The 13 th Institute of China Electronic Technology Group Corporation，Shijiazhuang 050051，China,Institute of RF&OEICs，Southeast University，Nanjing 210096，China,Institute of RF&OEICs，Southeast University，Nanjing 210096，China,Shanghai Institute of Microsystem & Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,Shanghai Institute of Microsystem & Information Technology，Chinese Academy of Sciences，Shanghai 200050，China and Shanghai Institute of Microsystem & Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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