Fig. 1.
Schematic diagram of LED structure.
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| Citation: |
Na Liu, Xiaoyan Yi, Meng Liang, Enqing Guo, Xiangxu Feng, Zhao Si, Xiaoli Ji, Xuecheng Wei, Hongxi Lu, Zhiqiang Liu, Ning Zhang, Junxi Wang, Jinmin Li. Effects of the p-AlInGaN/GaN superlattices' structure on the performance of blue LEDs[J]. Journal of Semiconductors, 2014, 35(2): 024010. doi: 10.1088/1674-4926/35/2/024010
N Liu, X Y Yi, M Liang, E Q Guo, X X Feng, Z Si, X L Ji, X C Wei, H X Lu, Z Q Liu, N Zhang, J X Wang, J M Li. Effects of the p-AlInGaN/GaN superlattices\' structure on the performance of blue LEDs[J]. J. Semicond., 2014, 35(2): 024010. doi: 10.1088/1674-4926/35/2/024010.
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Effects of the p-AlInGaN/GaN superlattices' structure on the performance of blue LEDs
doi: 10.1088/1674-4926/35/2/024010
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Abstract
The advantages of the p-AlInGaN/GaN superlattices' (SLs) structure as an electron blocking layer (EBL) for InGaN blue light-emitting diodes (LEDs) were studied by experiment and APSYS simulation. Electroluminescence (EL) measurement results show that the LEDs with the p-AlInGaN/GaN SLs' structure EBL exhibited better optical performance compared with the conventional AlGaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency, and the confinement of electrons' overflow between multiple quantum-wells (MQWs) and EBL.-
Keywords:
- EBL,
- p-AlInGaN/GaN SLs,
- multiple quantum-wells
-
References
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