| Citation: |
Wu Xiaoli, Wang Nili, Zhang Kefeng, Tang Hengjing, Huang Yimin, Han Bing, Li Xue, Gong Haimei. Microwave Photoconductivity Decay (μ-PCD) Characterization and Mechanism of p＋-InP/n-InGaAs/n-InP Double Heterojunction Material[J]. Journal of Semiconductors, 2007, In Press.
Wu X L, Wang N L, Zhang K F, Tang H J, Huang Y M, Han B, Li X, Gong H M. Microwave Photoconductivity Decay (μ-PCD) Characterization and Mechanism of p＋-InP/n-InGaAs/n-InP Double Heterojunction Material[J]. Chin. J. Semicond., 2007, 28(11): 1769.
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Microwave Photoconductivity Decay (μ-PCD) Characterization and Mechanism of p＋-InP/n-InGaAs/n-InP Double Heterojunction Material
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Abstract
The lifetime mapping of a p＋-InP/n-InGaAs/n-InP double heterojunction wafer is measured by the microwave photoconductivity decay technique,and the mechanism of photoconductivity decay in this material is analyzed.Based on this analysis,the relationship between the measured lifetime and the device parameters is determined,and the abnormal change of lifetime with the decrease in temperature is explained. -
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