Chin. J. Semicond. > 2007, Volume 28 > Issue 11 > 1818-1823

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A Novel p-Type Domino AND Gate Design for Sub-65nm CMOS Technologies

Wang Jinhui, Gong Na, Feng Shoubo, Duan Liying, Hou Ligang, Wu Wuchen and Dong Limin

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Abstract: A novel p-type Domino AND gate utilizing the sleep transistor,dual threshold voltage,and source following evaluation gate (SEPG) techniques is proposed.HSPICE simulation results prove that the leakage current of the proposed design can be reduced by 43%,62%,and 67% while improving the noise margin 3.4%,23.6%,and 13.7% when compared to standard dual Vt Dominos,standard low Vt dominos,and the SEFG structure under similar delay time,respectively.Therefore,the proposed Dominos AND gate solves the high leakage current and deteriorated robustness problem in sub-65nm CMOS technologies.Finally,the inputs and clock signals combination sleep state dependent on leakage current characteristics is analyzed,and the optimal sleep state is obtained.

Key words: low powerleakage currentp-type Dominos AND gatenoise immunity

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    Received: 18 August 2015 Revised: 01 June 2007 Online: Published: 01 November 2007

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      Wang Jinhui, Gong Na, Feng Shoubo, Duan Liying, Hou Ligang, Wu Wuchen, Dong Limin. A Novel p-Type Domino AND Gate Design for Sub-65nm CMOS Technologies[J]. Journal of Semiconductors, 2007, In Press. Wang J H, Gong N, Feng S B, Duan L Y, Hou L G, Wu W C, Dong L M. A Novel p-Type Domino AND Gate Design for Sub-65nm CMOS Technologies[J]. Chin. J. Semicond., 2007, 28(11): 1818.Export: BibTex EndNote
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      Wang Jinhui, Gong Na, Feng Shoubo, Duan Liying, Hou Ligang, Wu Wuchen, Dong Limin. A Novel p-Type Domino AND Gate Design for Sub-65nm CMOS Technologies[J]. Journal of Semiconductors, 2007, In Press.

      Wang J H, Gong N, Feng S B, Duan L Y, Hou L G, Wu W C, Dong L M. A Novel p-Type Domino AND Gate Design for Sub-65nm CMOS Technologies[J]. Chin. J. Semicond., 2007, 28(11): 1818.
      Export: BibTex EndNote

      A Novel p-Type Domino AND Gate Design for Sub-65nm CMOS Technologies

      • Received Date: 2015-08-18
      • Accepted Date: 2007-05-07
      • Revised Date: 2007-06-01
      • Published Date: 2007-10-24

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