Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 149-152

Electrical Transport Properties of ZnO/p-Si Heterostructure

Gu Qilin, Chen Xudong, Ling Zhicong, Mei Yongfeng, Fu Jinyu, Xiao Jiju and Zhu Jianhao

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Abstract: Rectifying undoped and nitrogen-doped ZnO/p-Si heterojunctions are fabricated by plasma immersion ion implan· tation and deposition.The undoped and nitrogen-doped ZnO films are n type(n≈10^19cm-3) and highly resistive(resistivity ~10^5 Ω·cm),respectively.While forward biasing the undoped-ZnO/P-Si,the current follows ohmic behavior if the applied bias iS larger than~0.4V.However,for the nitrogen-doped-ZnO/P-Si sample,the current is ohmic for Vforward<1.0V and then transits to J-V2 for Vforward>2.5V.The transport properties of the undoped-ZnO/P-Si and the N-doped-ZnO/P·Si diodes are explained in terms of the Anderson model and the space charge limited current model,respectively.

Key words: PIII&DZnO/p-Si heterojunctionsAnderson model space charge limited current modelcurrent transport

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Gu Qilin, Chen Xudong, Ling Zhicong, Mei Yongfeng, Fu Jinyu, Xiao Jiju, Zhu Jianhao. Electrical Transport Properties of ZnO/p-Si Heterostructure[J]. Journal of Semiconductors, 2007, In Press. Gu Q L, Chen X D, Ling Z C, Mei Y F, Fu J Y, Xiao J J, Zhu J H. Electrical Transport Properties of ZnO/p-Si Heterostructure[J]. Chin. J. Semicond., 2007, 28(S1): 149.Export: BibTex EndNote
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      Gu Qilin, Chen Xudong, Ling Zhicong, Mei Yongfeng, Fu Jinyu, Xiao Jiju, Zhu Jianhao. Electrical Transport Properties of ZnO/p-Si Heterostructure[J]. Journal of Semiconductors, 2007, In Press.

      Gu Q L, Chen X D, Ling Z C, Mei Y F, Fu J Y, Xiao J J, Zhu J H. Electrical Transport Properties of ZnO/p-Si Heterostructure[J]. Chin. J. Semicond., 2007, 28(S1): 149.
      Export: BibTex EndNote

      Electrical Transport Properties of ZnO/p-Si Heterostructure

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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