| Citation: |
Cai Daolin, Li Ping, Zhai Yahong, Song Zhitang, Chen Houpeng. Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer[J]. Journal of Semiconductors, 2011, 32(9): 094007. doi: 10.1088/1674-4926/32/9/094007
Cai D L, Li P, Zhai Y H, Song Z T, Chen H P. Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer[J]. J. Semicond., 2011, 32(9): 094007. doi: 10.1088/1674-4926/32/9/094007.
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Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer
doi: 10.1088/1674-4926/32/9/094007
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Abstract
Pb(Zr0.52Ti0.48)O3 (PZT) thin films have been deposited on a p-type Si substrate separated by a polycrystalline silicon/SiO2 stacked buffer layer. The X-ray diffraction peaks of the PZT thin films prepared on the polycrystalline silicon annealed at different temperatures were measured. In addition, the polarization of the Pt/PZT/polycrystalline silicon capacitor has been investigated. The memory capacitor of the metal/ferroelectric/polycrystalline silicon/SiO2/semiconductor structure annealed at 650 ℃ exhibits a clockwise capacitance-voltage hysteresis loop due to the ferroelectric polarization of the PZT thin film. The memory window increases with increasing the area coupling ratio between the SiO2 capacitor and the PZT capacitor.-
Keywords:
- capacitor
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References
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