| Citation: |
Tan Kaizhou, Zhang Jing, Xu Shiliu, Zhang Zhengfan, Yang Yonghui, Chen Jun, Liang Tao. Study of hybrid orientation structure wafer[J]. Journal of Semiconductors, 2011, 32(6): 063002. doi: 10.1088/1674-4926/32/6/063002
Tan K Z, Zhang J, Xu S L, Zhang Z F, Yang Y H, Chen J, Liang T. Study of hybrid orientation structure wafer[J]. J. Semicond., 2011, 32(6): 063002. doi: 10.1088/1674-4926/32/6/063002.
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Study of hybrid orientation structure wafer
doi: 10.1088/1674-4926/32/6/063002
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Abstract
Two types of 5 μm thick hybrid orientation structure wafers, which were integrated by (110) or (100) orientation silicon wafers as the substrate, have been investigated for 15–40 V voltage ICs and MEMS sensor applications. They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy technique, and have been presented in China for the first time. The thickness of BOX SiO2 buried in wafer is 220 nm. It has been found that the quality of hybrid orientation structure with (100) wafer substrate is better than that with (110) wafer substrate by "Sirtl defect etching of HOSW".-
Keywords:
- HOT,
- SOI,
- (110) crystal orientation,
- 15–40 V ICs,
- MEMS sensor
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References
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Proportional views
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