Chin. J. Semicond. > 2000, Volume 21 > Issue 3 > 268-273
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MOSFET热载流子退化/寿命模型参数提取

杨谟华 , 于奇 , 王向展 , 陈勇 , 刘玉奎 , 肖兵 , 杨沛锋 , 方朋 , 孔学东 , 谭超元 and 钟征宇

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Key words: 模型参数, 热载流子, 退化/寿命, MOSFET

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(3): 268-273
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      • Received Date: 2015-08-20

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