SEMICONDUCTOR DEVICES

A novel method using SiNW to measure stress in cantilevers

Jiang Yanfeng and Wang Jianping

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Abstract: A silicon (SiNW) nanowire device, made by the bottom-up method, has been assembled in a MEMS device for measuring stress in cantilevers. The process for assembling a SiNW on a cantilever has been introduced. The current as a function of the voltage applied to a SiNW have been measured, and the different resistances before and after cantilever releasing have been observed. A parameter, , has been derived based on the resistances. For a fixed sample, a linear relationship between and the stress in the cantilever has been observed; and, so, it has been demonstrated that the resistance of SiNW can reflect the variation of the cantilever stress.

Key words: SiNW

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    Received: 18 August 2015 Revised: 15 February 2009 Online: Published: 01 June 2009

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      Jiang Yanfeng, Wang Jianping. A novel method using SiNW to measure stress in cantilevers[J]. Journal of Semiconductors, 2009, 30(6): 064007. doi: 10.1088/1674-4926/30/6/064007 Jiang Y F, Wang J P. A novel method using SiNW to measure stress in cantilevers[J]. J. Semicond., 2009, 30(6): 064007. doi: 10.1088/1674-4926/30/6/064007.Export: BibTex EndNote
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      Jiang Yanfeng, Wang Jianping. A novel method using SiNW to measure stress in cantilevers[J]. Journal of Semiconductors, 2009, 30(6): 064007. doi: 10.1088/1674-4926/30/6/064007

      Jiang Y F, Wang J P. A novel method using SiNW to measure stress in cantilevers[J]. J. Semicond., 2009, 30(6): 064007. doi: 10.1088/1674-4926/30/6/064007.
      Export: BibTex EndNote

      A novel method using SiNW to measure stress in cantilevers

      doi: 10.1088/1674-4926/30/6/064007
      • Received Date: 2015-08-18
      • Accepted Date: 2008-07-30
      • Revised Date: 2009-02-15
      • Published Date: 2009-07-13

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