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Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

Moumita Mukherjee1, P. R. Tripathy2 and S. P. Pati3

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 Corresponding author: Moumita Mukherjee, Email: mukherjee_phys@yahoo.in;pravashrt76@yahoo.co.in

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Abstract: A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal SiC-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/SiC-based hetero-structure devices. Under small-voltage modulation (~ 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance (5 × 106S/m2), susceptance (10.4 × 107 S/m2}), average breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude (50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/SiC-based IMPATT for possible application in high-power MM-wave communication systems.

Key words: Si/SiC hetero-structure double drift diodefull-scale large-signal modellinghigh-powerparasitic effectsnoise-analysis



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Fig. 1.  Depletion layer of a p-n junction hetero-structure diode reverse-biased to breakdown.

Fig. 2.  Terminal voltage and current in an IMPATT diode. $C_{\rm d}$ $=$ Depletion region capacitance,$Y_{\rm d}$ $=$ Diode admittance,$Y_{\rm c}$ $=$ Circuit admittance including the diode package.

Fig. 3.  (a) Voltage and (b),(c) current waveforms of Si/SiC IMPATTs under large-signal analysis.

Fig. 4.  (a),(b) Plots of electric field profiles (snap-shots) at various points in time (phase angle 0$^\circ$ and 90$^\circ)$ for the diode operating at a fundamental frequency 94 GHz,current density 8 $\times$ 10$^{8}$ A/m$^{2}$ and efficiency $=$ 15 %. (c),(d) Plots of electric field profiles (snap-shots) at various points in time (phase angle 180$^\circ$ and 270$^\circ)$ for the diode operating at a fundamental frequency 94 GHz,current density 8 $\times$ 10$^{8}$ A/m$^{2}$ and efficiency $=$ 15 %. (e) Plot of electric field profile (snap-shot) at various points in time (phase angle 360$^\circ)$ for the diode operating at a fundamental frequency 94 GHz,current density 8 $\times$ 10$^{8}$ A/m$^{2}$ and efficiency $=$ 15 %.

Fig. 5.  Diode admittance plots as a function of fundamental frequency and AC-voltage amplitude.

Fig. 6.  Plots of power generating efficiency and RF power with ac voltage amplitude of hetero-structure DD SiC IMPATTs for fundamental operating frequency 94 GHz (current density 8 $\times$ 10$^{8}$ A/m$^{2})$.

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Table 1.   Optimised design parameters of Si/SiC DD hetero-structure IMPATTs for large-signal analysis.

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Table 2.   Values of series resistance ($R_{\rm S,total})$ of Si/SiC DD hetero-structure IMPATT [bias current density $=$ 8.0 $\times$ 10$^{8}$ A/m$^{2}$ and frequency $=$ 94 GHz].

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    Received: 14 November 2014 Revised: Online: Published: 01 June 2015

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      Moumita Mukherjee, P. R. Tripathy, S. P. Pati. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis[J]. Journal of Semiconductors, 2015, 36(6): 064005. doi: 10.1088/1674-4926/36/6/064005 M Mukherjee, P. R. Tripathy, S. P. Pati. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis[J]. J. Semicond., 2015, 36(6): 064005. doi: 10.1088/1674-4926/36/6/064005.Export: BibTex EndNote
      Citation:
      Moumita Mukherjee, P. R. Tripathy, S. P. Pati. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis[J]. Journal of Semiconductors, 2015, 36(6): 064005. doi: 10.1088/1674-4926/36/6/064005

      M Mukherjee, P. R. Tripathy, S. P. Pati. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis[J]. J. Semicond., 2015, 36(6): 064005. doi: 10.1088/1674-4926/36/6/064005.
      Export: BibTex EndNote

      Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

      doi: 10.1088/1674-4926/36/6/064005
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      • Corresponding author: Email: mukherjee_phys@yahoo.in;pravashrt76@yahoo.co.in
      • Received Date: 2014-11-14
      • Accepted Date: 2015-01-06
      • Published Date: 2015-01-25

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