Chin. J. Semicond. > 2001, Volume 22 > Issue 11 > 1364-1368

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蒙特卡罗方法模拟金属-半导体接触的直接隧穿效应(英文)

孙雷 , 杜刚 , 刘晓彦 and 韩汝琦

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Key words: 蒙特卡罗器件模拟, 金属-半导体接触, 直接隧穿, Schottky效应

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2001

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      • Received Date: 2015-08-20

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