SEMICONDUCTOR MATERIALS

Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE

Junsong Cao1, Xin Lü1, Lubing Zhao2, Shuang Qu3 and Wei Gao1,

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 Corresponding author: Wei Gao, E-mail: gaowei@china-led.net

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Abstract: The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.

Key words: metalorganic vapor phase epitaxygallium nitridehigh resolution X-ray diffraction



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Fig. 1.  10 $\times $ 10 $\mu $m$^{2}$ AFM images of the surface of 100 nm GaN film (samples A and B). The growth rates of samples are 1.6 and 0.8~$\mu $m/h respectively.

Fig. 2.  2 $\times $ 2 $\mu $m$^{2}$ AFM images of the surface of samples C and D, which are obtained by growing 1.2 $\mu $m undoped GaN on samples A and B.

Fig. 3.  10 $\times $ 10 $\mu $m$^{2}$ AFM images of the surface of 100 nm GaN film (samples E, B and F). The V/III ratio of samples is 1800, 1150 and 600, respectively.

Fig. 4.  RSMs of 10 $\times $ 10 $\mu $m$^{2}$ AFM images of the surface of 100~nm GaN film with the different V/III ratio.

Fig. 5.  2 $\times $ 2 $\mu $m$^{2}$ AFM images of the surface of samples D and G, which are Si-doped samples without and with the Mg-surfactant layer.

Table 1.   The basic and the first stage growth parameters for the seven samples.

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    Received: 14 July 2014 Revised: Online: Published: 01 February 2015

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      Junsong Cao, Xin Lü, Lubing Zhao, Shuang Qu, Wei Gao. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE[J]. Journal of Semiconductors, 2015, 36(2): 023005. doi: 10.1088/1674-4926/36/2/023005 J S Cao, X Lü, L B Zhao, S Qu, W Gao. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE[J]. J. Semicond., 2015, 36(2): 023005. doi: 10.1088/1674-4926/36/2/023005.Export: BibTex EndNote
      Citation:
      Junsong Cao, Xin Lü, Lubing Zhao, Shuang Qu, Wei Gao. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE[J]. Journal of Semiconductors, 2015, 36(2): 023005. doi: 10.1088/1674-4926/36/2/023005

      J S Cao, X Lü, L B Zhao, S Qu, W Gao. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE[J]. J. Semicond., 2015, 36(2): 023005. doi: 10.1088/1674-4926/36/2/023005.
      Export: BibTex EndNote

      Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE

      doi: 10.1088/1674-4926/36/2/023005
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      Project supported by the National High Technology Research and Development Program of China (No. 2012AA03A115).

      More Information
      • Corresponding author: E-mail: gaowei@china-led.net
      • Received Date: 2014-07-14
      • Accepted Date: 2014-08-17
      • Published Date: 2015-01-25

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