SEMICONDUCTOR DEVICES

An exploration of slab-coupled semiconductor lasers

Hongqi Jing, Cong Xiong, Zhen Dong, Nan Lin, Qiong Qi, Li Zhong, Suping Liu and Xiaoyu Ma

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Abstract: To obtain a high-power and efficient single-mode laser, a new laser called the slab coupled optical waveguide laser (SCOWL) has been developed. We have simulated its structure and grown the chip with this structure by low-pressure metal organic chemical vapor deposition. We have also produced the broad-area SCOWL and compared it with the traditional structure laser in terms of some performances. This work lays the foundation for further research of ridged lasers with the same structure.

Key words: SCOWLtraditional laserbroad-area laser



[1]
Walpole J N, Kintzer E S, Chinn S R, et al. High-power, strained-layer InGaAS/AlGaAs tapered traveling wave amplifier. Appl Phys Lett, 1992, 61:740 doi: 10.1063/1.107783
[2]
O'Brien S, Schoenfelder A, Lang R J. 5-W CW diffraction-limited InGaAs broad-area flared amplifier at 970 nm. IEEE Photonics Technol Lett, 1997, 9:1217 doi: 10.1109/68.618483
[3]
Walpole J N, Donnelly J P, Missaggia L J, et al. Gaussian patterned contacts for improved beam stability of 1.55-m tapered lasers. IEEE Photonics Technol Lett, 2000, 12:257 doi: 10.1109/68.826906
[4]
Lang R J, Dzurko K, Hardy A A, et al. Theory of grating-confined broad area lasers. IEEE J Quantum Electron, 1998, 34:2196 doi: 10.1109/3.726614
[5]
Pezeshki B, Hagberg M, Zelinski M, et al. 400-mW single-frequency 660-nm semiconductor laser. IEEE Photonics Technol Lett, 1999, 11:791 doi: 10.1109/68.769709
[6]
Bewley W W, Vurgaftman I, Bartolo R E, et al. Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers. IEEE J Sel Topics Quantum Electron, 2001, 7:96 doi: 10.1109/2944.954116
[7]
Garbuzov D Z, Xu L, Forrest S R, et al. 1.5-μm wavelength SCH_MQW broadened-waveguide laser diodes with low internal loss and high output power. Electron Lett, 1996, 32:1717 doi: 10.1049/el:19961098
[8]
Kunetzsov M, Hakimi F, Sprague R, et al. High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting lasers with circular TEM00 beams. IEEE Photonics Technol Lett, 1997, 9:1063 doi: 10.1109/68.605500
[9]
Walpole J N, Donnelly J P, Taylor P J, et al. Slab-coupled 1.3-μm semiconductor laser with single-spatial large-diameter mode. IEEE Photonics Technol Lett, 2002, 14:756 doi: 10.1109/LPT.2002.1003083
[10]
Donnelly J P, Huang R K, Walpole J N, et al. AlGaAs-InGaAs slab-coupled optical waveguide lasers. IEEE J Quantum Electron, 2003, 9:289
[11]
Huang R K, Donnelly J P, Missaggia L J, et al. High-power nearly diffraction-limited AlGaAs-InGaAs semiconductor slab-coupled optical waveguide laser. IEEE Photonics Technol Lett, 2003, 15: 900
[12]
Marcatili E A. Slab-coupled waveguides. Bell System Tech J, 1974, 53:645 doi: 10.1002/bltj.1974.53.issue-4
[13]
Hu Like, Qi Qing, Xiong Cong, et al. High-power 980 nm quantum-well laser diode with a small vertical divergence angle. Semicond Optoelectron, 2010, 31(5):677
Fig. 1.  Extensional structure of (a) the SCOWL and (b) the traditional construction.

Fig. 2.  Optical waveguide structure with rib region.

Fig. 3.  Theoretical calculative vertical divergent of the traditional structure and the SCOWL.

Fig. 4.  (a) Optical power and (b) spectrum measurement.

Table 1.   Performance comparison of traditional construction and the broad-area of the SCOWL.

[1]
Walpole J N, Kintzer E S, Chinn S R, et al. High-power, strained-layer InGaAS/AlGaAs tapered traveling wave amplifier. Appl Phys Lett, 1992, 61:740 doi: 10.1063/1.107783
[2]
O'Brien S, Schoenfelder A, Lang R J. 5-W CW diffraction-limited InGaAs broad-area flared amplifier at 970 nm. IEEE Photonics Technol Lett, 1997, 9:1217 doi: 10.1109/68.618483
[3]
Walpole J N, Donnelly J P, Missaggia L J, et al. Gaussian patterned contacts for improved beam stability of 1.55-m tapered lasers. IEEE Photonics Technol Lett, 2000, 12:257 doi: 10.1109/68.826906
[4]
Lang R J, Dzurko K, Hardy A A, et al. Theory of grating-confined broad area lasers. IEEE J Quantum Electron, 1998, 34:2196 doi: 10.1109/3.726614
[5]
Pezeshki B, Hagberg M, Zelinski M, et al. 400-mW single-frequency 660-nm semiconductor laser. IEEE Photonics Technol Lett, 1999, 11:791 doi: 10.1109/68.769709
[6]
Bewley W W, Vurgaftman I, Bartolo R E, et al. Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers. IEEE J Sel Topics Quantum Electron, 2001, 7:96 doi: 10.1109/2944.954116
[7]
Garbuzov D Z, Xu L, Forrest S R, et al. 1.5-μm wavelength SCH_MQW broadened-waveguide laser diodes with low internal loss and high output power. Electron Lett, 1996, 32:1717 doi: 10.1049/el:19961098
[8]
Kunetzsov M, Hakimi F, Sprague R, et al. High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting lasers with circular TEM00 beams. IEEE Photonics Technol Lett, 1997, 9:1063 doi: 10.1109/68.605500
[9]
Walpole J N, Donnelly J P, Taylor P J, et al. Slab-coupled 1.3-μm semiconductor laser with single-spatial large-diameter mode. IEEE Photonics Technol Lett, 2002, 14:756 doi: 10.1109/LPT.2002.1003083
[10]
Donnelly J P, Huang R K, Walpole J N, et al. AlGaAs-InGaAs slab-coupled optical waveguide lasers. IEEE J Quantum Electron, 2003, 9:289
[11]
Huang R K, Donnelly J P, Missaggia L J, et al. High-power nearly diffraction-limited AlGaAs-InGaAs semiconductor slab-coupled optical waveguide laser. IEEE Photonics Technol Lett, 2003, 15: 900
[12]
Marcatili E A. Slab-coupled waveguides. Bell System Tech J, 1974, 53:645 doi: 10.1002/bltj.1974.53.issue-4
[13]
Hu Like, Qi Qing, Xiong Cong, et al. High-power 980 nm quantum-well laser diode with a small vertical divergence angle. Semicond Optoelectron, 2010, 31(5):677
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    Received: 10 October 2013 Revised: 26 November 2013 Online: Published: 01 May 2014

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      Hongqi Jing, Cong Xiong, Zhen Dong, Nan Lin, Qiong Qi, Li Zhong, Suping Liu, Xiaoyu Ma. An exploration of slab-coupled semiconductor lasers[J]. Journal of Semiconductors, 2014, 35(5): 054007. doi: 10.1088/1674-4926/35/5/054007 H Q Jing, C Xiong, Z Dong, N Lin, Q Qi, L Zhong, S P Liu, X Y Ma. An exploration of slab-coupled semiconductor lasers[J]. J. Semicond., 2014, 35(5): 054007. doi: 10.1088/1674-4926/35/5/054007.Export: BibTex EndNote
      Citation:
      Hongqi Jing, Cong Xiong, Zhen Dong, Nan Lin, Qiong Qi, Li Zhong, Suping Liu, Xiaoyu Ma. An exploration of slab-coupled semiconductor lasers[J]. Journal of Semiconductors, 2014, 35(5): 054007. doi: 10.1088/1674-4926/35/5/054007

      H Q Jing, C Xiong, Z Dong, N Lin, Q Qi, L Zhong, S P Liu, X Y Ma. An exploration of slab-coupled semiconductor lasers[J]. J. Semicond., 2014, 35(5): 054007. doi: 10.1088/1674-4926/35/5/054007.
      Export: BibTex EndNote

      An exploration of slab-coupled semiconductor lasers

      doi: 10.1088/1674-4926/35/5/054007
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      Project supported by the National Major Scientific Instruments and Equipments Developed Special (No. 2011YQ04007701) and the Defense Basic Research Plan (No. B1320133033)

      the National Major Scientific Instruments and Equipments Developed Special 2011YQ04007701

      the Defense Basic Research Plan B1320133033

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      • Author Bio:

        Hongqi Jing Jing Hongqi, Email:jinghq@semi.ac.cn

      • Received Date: 2013-10-10
      • Revised Date: 2013-11-26
      • Published Date: 2014-05-05

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