| Citation: |
Song Shulin, Chen Nuofu, Chai Chunlin, Yin Zhigang, Yang Shaoyan, Liu Zhikai. High Dose Mn Implanted GaAs[J]. Journal of Semiconductors, 2005, In Press.
Song S L, Chen N F, Chai C L, Yin Z G, Yang S Y, Liu Z K. High Dose Mn Implanted GaAs[J]. Chin. J. Semicond., 2005, 26(13): 24.
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High Dose Mn Implanted GaAs
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Abstract
High dose Mn ions are implanted into semi-insulating GaAs substrate at room temperature by low energy ion beam deposit technique.All the samples are annealed at different conditions.There are more new phase peaks formed after high temperature annealing.It is shown that the FWHM of (004) peak broadens from rocking curve results so more Mn ions entered crystal lattice.From the comparison of two samples’ AFM images,the roughness of the sample surface increases after annealing.Magnetization increases after annealing from AGM results. -
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