Chin. J. Semicond. > 2005, Volume 26 > Issue 2 > 309-313

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Abstract: 在InP(001)衬底上使用分子束外延技术自组织生长了多周期InAs/InAlGaAs量子点阵列结构。根据对透射电镜和光致发光谱结果的分析,认为引入与InP衬底晶格匹配的InAlGaAs缓冲层可以获得较大的InAs量子点结构,而InAlGaAs层的表面特性对InAs量子点的结构及光学性质有很大影响。对InP基InAlGaAs缓冲层上自组织量子点的形核和演化机制进行了探讨,提出量子点的演化过程表现为量子点的合并长大并伴随着自身的徙动,以获得能量最优的分布状态。

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2005

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      InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质[J]. Journal of Semiconductors, 2005, In Press. InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质[J]. Chin. J. Semicond., 2005, 26(2): 309.Export: BibTex EndNote
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      InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质[J]. Journal of Semiconductors, 2005, In Press.

      InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质[J]. Chin. J. Semicond., 2005, 26(2): 309.
      Export: BibTex EndNote

      InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质

      • Received Date: 2015-08-19

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