SEMICONDUCTOR MATERIALS

Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05) 2O3 films

Pengfei Xing1, Yanxue Chen2 and Shaohua Sun1

+ Author Affiliations

PDF

Abstract: Room-temperature ferromagnetism was observed in (In0.95-xSnxFe0.05)2O3 (x=0-0.09) films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In2O3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism.

Key words: pulsed laser depositionroom-temperature ferromagnetism(In0.95-xSnxFe0.05)2O3 filmscarrier concentrationbound magnetic polaron model



[1]
Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science, 2000, 287:1019 doi: 10.1126/science.287.5455.1019
[2]
Sharma P, Gupta A, Rao K V, et al. Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO. Nat Mater, 2003, 2:673 doi: 10.1038/nmat984
[3]
Ueda K, Tabata H, Kawai T, Magnetic and electric properties of transition-metal-doped ZnO films. Appl Phys Lett, 2001, 79:988 doi: 10.1063/1.1384478
[4]
Matsumoto Y, Murakami M, Shono T, et al. Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide. Science, 2001, 291:854 doi: 10.1126/science.1056186
[5]
Ogale S B, Choudhary R J, Buban J P, et al. High temperature ferromagnetism with a giant magnetic moment in transparent Co-doped SnO2-δ. Phys Rev Lett, 2003, 91:77205 doi: 10.1103/PhysRevLett.91.077205
[6]
Coey J M D, Douvalis A P, Fitzgerald C B, et al. Ferromagnetism in Fe-doped SnO2 thin films. Appl Phys Lett, 2004, 84:1332 doi: 10.1063/1.1650041
[7]
Fitzgerald C B, Venkatesan M, Douvalis A P, et al. SnO2 doped with Mn, Fe or Co:room temperature dilute magnetic semiconductors. J Appl Phys, 2004, 95:7390 doi: 10.1063/1.1676026
[8]
Griffin K A, Pakhomov A B, Wang C M, et al. Intrinsic ferromagnetism in insulating cobalt doped anatase TiO2. Phys Rev Lett, 2005, 94:157204 doi: 10.1103/PhysRevLett.94.157204
[9]
Zhang Z H, Wang X, Xu J B, et al. Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures. Nat Nanotechnol, 20094:523 doi: 10.1038/nnano.2009.181
[10]
Colis S, Bouaine A, Moubah R, et al. Extrinsic ferromagnetism in epitaxial Co-doped CeO2 pulsed laser deposited films. J Appl Phys, 2010, 108:053910 doi: 10.1063/1.3481026
[11]
Liu X J, Zhu X Y, Song C, et al. Intrinsic and extrinsic origins of room temperature ferromagnetism in Ni-doped ZnO films. J Phys D:Appl Phys, 2009, 42:035004 doi: 10.1088/0022-3727/42/3/035004
[12]
Wang Q, Sun Q, Jena P. Carrier-mediated ferromagnetism in N codoped (Zn, Mn)O (10) thin films. Phys Rev B, 2004, 70:052408 doi: 10.1103/PhysRevB.70.052408
[13]
Akai H. Ferromagnetism and its stability in the diluted magnetic semiconductor (In, Mn)As. Phys Rev Lett, 1998, 81:3002 doi: 10.1103/PhysRevLett.81.3002
[14]
Coey J M D, Venkatesan M, Fitzgerald C B. Donor impurity band exchange in dilute ferromagnetic oxides. Nat Mater, 2004, 4:173 http://adsabs.harvard.edu/abs/2005NatMa...4..173C
[15]
Chopra K L, Major S, Pandya D K. Transparent conductors—a status review. Thin Solid Films, 1983, 102:1 doi: 10.1016/0040-6090(83)90256-0
[16]
Hong N H, Sakai J, Huong N T, et al. Room temperature ferromagnetism in laser ablated Ni-doped In2O3 thin films. Appl Phys Lett, 2005, 87:102505 doi: 10.1063/1.2041822
[17]
Philip J, Punnoose A, Kim B I, et al. Carrier-controlled ferromagnetism in transparent oxide semiconductors. Nat Mater, 2006, 5:298 doi: 10.1038/nmat1613
[18]
Raebiger H, Lany S, Zunger A. Control of ferromagnetism via electron doping in In2O3:Cr. Phys Rev Lett, 2008, 101:027203 doi: 10.1103/PhysRevLett.101.027203
[19]
Panguluri R P, Kharel P, Sudakar C, et al. Ferromagnetism and spin-polarized charge carriers in In2O3 thin films. Phys Rev B, 2009, 79:165208 doi: 10.1103/PhysRevB.79.165208
[20]
Hakimi A, Blamire M G, Heald S M, et al. Donor-band ferromagnetism in cobalt-doped indium oxide. Phys Rev B, 2011, 84:085201 doi: 10.1103/PhysRevB.84.085201
[21]
Xing P F, Chen Y X, Yan S S, et al. High temperature ferro-magnetism and perpendicular magnetic anisotropy in Fe-doped In2O3 films. Appl Phys Lett, 2008, 92:022513 doi: 10.1063/1.2834369
[22]
Xing P F, Chen Y X, Yan S S, et al. Tunable ferromagnetism by oxygen vacancies in Fe-doped In2O3 magnetic semiconductor. J Appl Phys, 2009, 106:043909 doi: 10.1063/1.3202287
[23]
Xing Pengfei, Chen Yanxue, Tang Minjian, et al. Room-temperature anisotropic ferromagnetism in Fe-doped In2O3 heteroepitaxial films. Chin Phys Lett, 2009, 26:117503 doi: 10.1088/0256-307X/26/11/117503
[24]
Lu Z, Hsu H, Tzeng Y, et al. Carrier-mediated ferromagnetism in single crystalline (Co, Ga)-codoped ZnO films. Appl Phys Lett, 2009, 94:152507 doi: 10.1063/1.3120557
Fig. 1.  (a) XRD patterns of the (In0.95-xSnxFe0.05)2O3 films.(b) The corresponding lattice constants for films with different Sndoping. The inset gives the relative position of the (440) peak for each film.

Fig. 2.  The corresponding resistivity and carrier concentration for (In0.95-xSnxFe0.05)2O3 films.

Fig. 3.  Hysteresis loops of the (In0.95-xSnxFe0.05)2O3 films measured by AGM at room temperature with the applied magnetic field parallel to the film plane. The diamagnetic signals have been substracted linearly by the high field magnetization.

[1]
Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science, 2000, 287:1019 doi: 10.1126/science.287.5455.1019
[2]
Sharma P, Gupta A, Rao K V, et al. Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO. Nat Mater, 2003, 2:673 doi: 10.1038/nmat984
[3]
Ueda K, Tabata H, Kawai T, Magnetic and electric properties of transition-metal-doped ZnO films. Appl Phys Lett, 2001, 79:988 doi: 10.1063/1.1384478
[4]
Matsumoto Y, Murakami M, Shono T, et al. Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide. Science, 2001, 291:854 doi: 10.1126/science.1056186
[5]
Ogale S B, Choudhary R J, Buban J P, et al. High temperature ferromagnetism with a giant magnetic moment in transparent Co-doped SnO2-δ. Phys Rev Lett, 2003, 91:77205 doi: 10.1103/PhysRevLett.91.077205
[6]
Coey J M D, Douvalis A P, Fitzgerald C B, et al. Ferromagnetism in Fe-doped SnO2 thin films. Appl Phys Lett, 2004, 84:1332 doi: 10.1063/1.1650041
[7]
Fitzgerald C B, Venkatesan M, Douvalis A P, et al. SnO2 doped with Mn, Fe or Co:room temperature dilute magnetic semiconductors. J Appl Phys, 2004, 95:7390 doi: 10.1063/1.1676026
[8]
Griffin K A, Pakhomov A B, Wang C M, et al. Intrinsic ferromagnetism in insulating cobalt doped anatase TiO2. Phys Rev Lett, 2005, 94:157204 doi: 10.1103/PhysRevLett.94.157204
[9]
Zhang Z H, Wang X, Xu J B, et al. Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures. Nat Nanotechnol, 20094:523 doi: 10.1038/nnano.2009.181
[10]
Colis S, Bouaine A, Moubah R, et al. Extrinsic ferromagnetism in epitaxial Co-doped CeO2 pulsed laser deposited films. J Appl Phys, 2010, 108:053910 doi: 10.1063/1.3481026
[11]
Liu X J, Zhu X Y, Song C, et al. Intrinsic and extrinsic origins of room temperature ferromagnetism in Ni-doped ZnO films. J Phys D:Appl Phys, 2009, 42:035004 doi: 10.1088/0022-3727/42/3/035004
[12]
Wang Q, Sun Q, Jena P. Carrier-mediated ferromagnetism in N codoped (Zn, Mn)O (10) thin films. Phys Rev B, 2004, 70:052408 doi: 10.1103/PhysRevB.70.052408
[13]
Akai H. Ferromagnetism and its stability in the diluted magnetic semiconductor (In, Mn)As. Phys Rev Lett, 1998, 81:3002 doi: 10.1103/PhysRevLett.81.3002
[14]
Coey J M D, Venkatesan M, Fitzgerald C B. Donor impurity band exchange in dilute ferromagnetic oxides. Nat Mater, 2004, 4:173 http://adsabs.harvard.edu/abs/2005NatMa...4..173C
[15]
Chopra K L, Major S, Pandya D K. Transparent conductors—a status review. Thin Solid Films, 1983, 102:1 doi: 10.1016/0040-6090(83)90256-0
[16]
Hong N H, Sakai J, Huong N T, et al. Room temperature ferromagnetism in laser ablated Ni-doped In2O3 thin films. Appl Phys Lett, 2005, 87:102505 doi: 10.1063/1.2041822
[17]
Philip J, Punnoose A, Kim B I, et al. Carrier-controlled ferromagnetism in transparent oxide semiconductors. Nat Mater, 2006, 5:298 doi: 10.1038/nmat1613
[18]
Raebiger H, Lany S, Zunger A. Control of ferromagnetism via electron doping in In2O3:Cr. Phys Rev Lett, 2008, 101:027203 doi: 10.1103/PhysRevLett.101.027203
[19]
Panguluri R P, Kharel P, Sudakar C, et al. Ferromagnetism and spin-polarized charge carriers in In2O3 thin films. Phys Rev B, 2009, 79:165208 doi: 10.1103/PhysRevB.79.165208
[20]
Hakimi A, Blamire M G, Heald S M, et al. Donor-band ferromagnetism in cobalt-doped indium oxide. Phys Rev B, 2011, 84:085201 doi: 10.1103/PhysRevB.84.085201
[21]
Xing P F, Chen Y X, Yan S S, et al. High temperature ferro-magnetism and perpendicular magnetic anisotropy in Fe-doped In2O3 films. Appl Phys Lett, 2008, 92:022513 doi: 10.1063/1.2834369
[22]
Xing P F, Chen Y X, Yan S S, et al. Tunable ferromagnetism by oxygen vacancies in Fe-doped In2O3 magnetic semiconductor. J Appl Phys, 2009, 106:043909 doi: 10.1063/1.3202287
[23]
Xing Pengfei, Chen Yanxue, Tang Minjian, et al. Room-temperature anisotropic ferromagnetism in Fe-doped In2O3 heteroepitaxial films. Chin Phys Lett, 2009, 26:117503 doi: 10.1088/0256-307X/26/11/117503
[24]
Lu Z, Hsu H, Tzeng Y, et al. Carrier-mediated ferromagnetism in single crystalline (Co, Ga)-codoped ZnO films. Appl Phys Lett, 2009, 94:152507 doi: 10.1063/1.3120557
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2476 Times PDF downloads: 8 Times Cited by: 0 Times

    History

    Received: 21 August 2012 Revised: 31 October 2012 Online: Published: 01 February 2013

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Pengfei Xing, Yanxue Chen, Shaohua Sun. Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05) 2O3 films[J]. Journal of Semiconductors, 2013, 34(2): 023002. doi: 10.1088/1674-4926/34/2/023002 P F Xing, Y X Chen, S H Sun. Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05) 2O3 films[J]. J. Semicond., 2013, 34(2): 023002. doi: 10.1088/1674-4926/34/2/023002.Export: BibTex EndNote
      Citation:
      Pengfei Xing, Yanxue Chen, Shaohua Sun. Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05) 2O3 films[J]. Journal of Semiconductors, 2013, 34(2): 023002. doi: 10.1088/1674-4926/34/2/023002

      P F Xing, Y X Chen, S H Sun. Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05) 2O3 films[J]. J. Semicond., 2013, 34(2): 023002. doi: 10.1088/1674-4926/34/2/023002.
      Export: BibTex EndNote

      Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05) 2O3 films

      doi: 10.1088/1674-4926/34/2/023002
      Funds:

      the National Natural Science Foundation of China 11004149

      Project supported by the National Natural Science Foundation of China (No. 11004149) and the Seed Foundation of Tianjin University

      the Seed Foundation of Tianjin University 

      More Information
      • Author Bio:

        Pengfei Xing Xing Pengfei, Email:pfxing@tju.edu.cn

      • Received Date: 2012-08-21
      • Revised Date: 2012-10-31
      • Published Date: 2013-02-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return