| Citation: |
Jin Bo, Wang Xi, Chen Jing, Zhang Feng, Cheng Xinli, Chen Zhijun. Influence of Oxidation on Residual Strain Relaxation of SiGe Film Grown on SOI Substrate[J]. Journal of Semiconductors, 2006, In Press.
Jin B, Wang X, Chen J, Zhang F, Cheng X L, Chen Z J. Influence of Oxidation on Residual Strain Relaxation of SiGe Film Grown on SOI Substrate[J]. Chin. J. Semicond., 2006, 27(1): 86.
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Influence of Oxidation on Residual Strain Relaxation of SiGe Film Grown on SOI Substrate
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Abstract
The influence of oxidation on the relaxation of residual strain in SiGe films epitaxially grown on SOI substrate are studied.These samples are oxidized with different technologies for the purpose of studying the influence of different oxidation processes on the relaxation of residual strain in SiGe films.Oxidation driven Ge atoms diffuse from the SiGe film to the top silicon layer.There is residual strain in SiGe film relaxation processes with the diffusion of Ge atoms.We contrast the dislocation distribution in the SiGe film and the top silicon layer:there is a strain transfer process between the SiGe film and the top silicon layer during oxidation.-
Keywords:
- oxidation,
- SiGe on SOI,
- strain relaxation,
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References
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Proportional views
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