Chin. J. Semicond. > 2006, Volume 27 > Issue 6 > 970-975
|

LETTERS

A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions

Ma Desheng, Shi Yin and Dai Fa Foster

+ Author Affiliations

PDF

Abstract: We present the design of a wide-band low-noise amplifier (LNA) implemented in 0.35μm SiGe BiCMOS technology for cable and terrestrial tuner applications.The LNA utilizes current injection to achieve high linearity.Without using inductors,the LNA achieves 0.1～1GHz wide bandwidth and 18.8dB gain with less than 1.4dB of gain variation.The noise figure of the wideband LNA is 5dB,and its 1dB compression point is -2dBm and IIP3 is 8dBm.The LNA dissipates 120mW of power with a 5V supply.

Key words: BiCMOS, wide band, noise figure, linearity, low-noise amplifier, SiGe

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2624 Times PDF downloads: 2011 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 16 February 2006 Online: Published: 01 June 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2006  >  27(6): 970-975
      Ma Desheng, Shi Yin, Dai Fa Foster. A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions[J]. Journal of Semiconductors, 2006, In Press. Ma D S, Shi Y, Dai F F. A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions[J]. Chin. J. Semicond., 2006, 27(6): 970.Export: BibTex EndNote
      Citation:
      Ma Desheng, Shi Yin, Dai Fa Foster. A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions[J]. Journal of Semiconductors, 2006, In Press.

      Ma D S, Shi Y, Dai F F. A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions[J]. Chin. J. Semicond., 2006, 27(6): 970.
      Export: BibTex EndNote
      shu

      A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions

      • Artificial Neural Network and High Speed Circuit Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Artificial Neural Network and High Speed Circuit Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Department of Electrical & Computer Engineering,Auburn University,Auburn,AL 36849-5201,USA

      • Received Date: 2015-08-18
      • Accepted Date: 2006-01-17
      • Revised Date: 2006-02-16
      • Published Date: 2006-10-12

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return