SEMICONDUCTOR TECHNOLOGY

Electric dipole formation at high-k dielectric/SiO2 interface

Kai Han1, , Xiaolei Wang2, Hong Yang2 and Wenwu Wang2

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 Corresponding author: Kai Han, E-mail: hankai@wfu.edu.cn

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Abstract: The formation of an electric dipole at the high-k/SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k/SiO2 interface are explained by the dielectric contact induced gap states (DCIGS). The charge neutrality level (CNL) of the DCIGS, which represents a distribution of high-k and SiO2 contact induced gap states, is utilized to study the dipole moment. The charge transfer due to different CNLs of high-k and SiO2 is considered as the dominant origin of dipole formation. The theoretically calculated dipole strengths of high-k/SiO2 systems based on this model are in good agreement with the experimental data.

Key words: high-k dielectricband alignmentinterface dipole



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Fig. 1.  A schematic diagram of the energy band structure for a negative dipole formation in a high-$k$/SiO$_{2}$ system.

Fig. 2.  A schematic diagram of the energy band structure for a positive dipole formation in a high-$k$/SiO$_{2}$ system.

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Table 1.   Calculated electric dipole at the HfO$_{2}$/SiO$_{2}$ interface. The data of CNLs and experimental dipole are after References [23, 24, 11], respectively.

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    Received: 19 August 2014 Revised: Online: Published: 01 March 2015

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      Kai Han, Xiaolei Wang, Hong Yang, Wenwu Wang. Electric dipole formation at high-k dielectric/SiO2 interface[J]. Journal of Semiconductors, 2015, 36(3): 036004. doi: 10.1088/1674-4926/36/3/036004 K Han, X L Wang, H Yang, W W Wang. Electric dipole formation at high-k dielectric/SiO2 interface[J]. J. Semicond., 2015, 36(3): 036004. doi: 10.1088/1674-4926/36/3/036004.Export: BibTex EndNote
      Citation:
      Kai Han, Xiaolei Wang, Hong Yang, Wenwu Wang. Electric dipole formation at high-k dielectric/SiO2 interface[J]. Journal of Semiconductors, 2015, 36(3): 036004. doi: 10.1088/1674-4926/36/3/036004

      K Han, X L Wang, H Yang, W W Wang. Electric dipole formation at high-k dielectric/SiO2 interface[J]. J. Semicond., 2015, 36(3): 036004. doi: 10.1088/1674-4926/36/3/036004.
      Export: BibTex EndNote

      Electric dipole formation at high-k dielectric/SiO2 interface

      doi: 10.1088/1674-4926/36/3/036004
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      Project supported by the National Natural Science Foundation of China (No. 61404093), and the Doctoral Scientific Research Foundation of Weifang University (No. 2014BS02).

      More Information
      • Corresponding author: E-mail: hankai@wfu.edu.cn
      • Received Date: 2014-08-19
      • Accepted Date: 2014-10-14
      • Published Date: 2015-01-25

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