Chin. J. Semicond. > 2006, Volume 27 > Issue 3 > 381-387

MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs

He Li, Chen Lu, Wu Jun, Wu Yan, Wang Yuanzhang, Yu Meifang, Yang Jianrong, Ding Ruijun, Hu Xiaoning, Li Yanjin and Zhang Qinyao

+ Author Affiliations

PDF

Abstract: Some results on the molecular-beam epitaxial growth of HgCdTe focusing on the requirements of the 3rd generation infrared focal plane arrays are described.Good uniformity is observed over 75mm HgCdTe epilayers,and the deviation in cutoff wavelength is within 0.1μm at 80K.A variety of surface defects are observed and the formation mechanism is discussed.The average density of surface defects in 75mm HgCdTe epilayers is found to be less than 300cm-2.It is found that the surface sticking coefficient of As during HgCdTe growth is very low and is sensitive to growth temperature,being only ~1E-4 at 170℃.The activation energy of As in HgCdTe was determined to be 19.5meV,which decreases as (Na-Nd)1/3 with a slope of 3.1E-5meV·cm.The diffusion coefficients of As in HgCdTe of 1.0±0.9E-16,8±3E-15,and 1.5±0.9E-13cm2/s are obtained at temperatures of 240,380,and 440℃,respectively under Hg-saturated pressure.The MBE-grown HgCdTe is incorporated into FPA fabrications,and the preliminary results are presented.

Key words: MBE HgCdTeinfrared focal plane arrays

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 3111 Times PDF downloads: 2119 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 March 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      He Li, Chen Lu, Wu Jun, Wu Yan, Wang Yuanzhang, Yu Meifang, Yang Jianrong, Ding Ruijun, Hu Xiaoning, Li Yanjin, Zhang Qinyao. MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs[J]. Journal of Semiconductors, 2006, In Press. He L, Chen L, Wu J, Wu Y, Wang Y Z, Yu M F, Yang J R, Ding R J, Hu X N, Li Y J, Zhang Q Y. MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs[J]. Chin. J. Semicond., 2006, 27(3): 381.Export: BibTex EndNote
      Citation:
      He Li, Chen Lu, Wu Jun, Wu Yan, Wang Yuanzhang, Yu Meifang, Yang Jianrong, Ding Ruijun, Hu Xiaoning, Li Yanjin, Zhang Qinyao. MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs[J]. Journal of Semiconductors, 2006, In Press.

      He L, Chen L, Wu J, Wu Y, Wang Y Z, Yu M F, Yang J R, Ding R J, Hu X N, Li Y J, Zhang Q Y. MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs[J]. Chin. J. Semicond., 2006, 27(3): 381.
      Export: BibTex EndNote

      MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return