SEMICONDUCTOR DEVICES

High performance AlGaN/GaN HEMTs with AlN/SiNx passivation

Xin Tan1, Yuanjie Lü1, Guodong Gu1, Li Wang2, Shaobo Dun1, Xubo Song1, Hongyu Guo1, Jiayun Yin1, Shujun Cai1 and Zhihong Feng1,

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 Corresponding author: Zhihong Feng, E-mail: ga917vv@163.com

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Abstract: AlGaN/GaN high electron-mobility transistors (HEMTs) with 5 nm AlN passivation by plasma enhanced atomic layer deposition (PEALD) were fabricated, covered by 50 nm SiNx which was grown by plasma enhanced chemical vapor deposition (PECVD). With PEALD AlN passivation, current collapse was suppressed more effectively and the devices show better subthreshold characteristics. Moreover, the insertion of AlN increased the RF transconductance, which lead to a higher cut-off frequency. Temperature dependence of DC characteristics demonstrated that the degradations of drain current and maximum transconductance at elevated temperatures for the AlN/SiNx passivated devices were much smaller compared with the devices with SiNx passivation, indicating that PEALD AlN passivation can improve the high temperature operation of the AlGaN/GaN HEMTs.

Key words: AlGaN/GaN HEMTsplasma enhanced atomic layer deposition (PEALD)AlNpassivationsubthreshold hysteresisthermal stability



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Fig. 1.  Schematic cross-section of AlGaN/GaN HEMTs with different passivation methods.

Fig. 2.  Transfer characteristics curves of the devices before passivation, with SiN$_{x}$ and AlN/SiN$_{x}$ passivation.

Fig. 3.  RF characteristics of the devices with different passivations.

Fig. 4.  The normalized saturate drain current and maximum transconductance at elevated temperatures.

Table 1.   Model parameters of the devices with different passivation layers.

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    Received: 24 November 2014 Revised: Online: Published: 01 July 2015

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      Xin Tan, Yuanjie Lü, Guodong Gu, Li Wang, Shaobo Dun, Xubo Song, Hongyu Guo, Jiayun Yin, Shujun Cai, Zhihong Feng. High performance AlGaN/GaN HEMTs with AlN/SiNx passivation[J]. Journal of Semiconductors, 2015, 36(7): 074008. doi: 10.1088/1674-4926/36/7/074008 X Tan, Y Lü, G D Gu, L Wang, S B Dun, X B Song, H Y Guo, J Y Yin, S J Cai, Z H Feng. High performance AlGaN/GaN HEMTs with AlN/SiNx passivation[J]. J. Semicond., 2015, 36(7): 074008. doi: 10.1088/1674-4926/36/7/074008.Export: BibTex EndNote
      Citation:
      Xin Tan, Yuanjie Lü, Guodong Gu, Li Wang, Shaobo Dun, Xubo Song, Hongyu Guo, Jiayun Yin, Shujun Cai, Zhihong Feng. High performance AlGaN/GaN HEMTs with AlN/SiNx passivation[J]. Journal of Semiconductors, 2015, 36(7): 074008. doi: 10.1088/1674-4926/36/7/074008

      X Tan, Y Lü, G D Gu, L Wang, S B Dun, X B Song, H Y Guo, J Y Yin, S J Cai, Z H Feng. High performance AlGaN/GaN HEMTs with AlN/SiNx passivation[J]. J. Semicond., 2015, 36(7): 074008. doi: 10.1088/1674-4926/36/7/074008.
      Export: BibTex EndNote

      High performance AlGaN/GaN HEMTs with AlN/SiNx passivation

      doi: 10.1088/1674-4926/36/7/074008
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      Project supported by the National Natural Science Foundation of China (No. 60890192).

      More Information
      • Corresponding author: E-mail: ga917vv@163.com
      • Received Date: 2014-11-24
      • Accepted Date: 2015-02-05
      • Published Date: 2015-01-25

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