| Citation: |
Li Chuanbo, Mao Rongwei, Zuo Yuhua, Cheng Buwen, Yu Jinzhong, Wang Qiming. Modulated Photoluminescence of Ge Quantum Dots Grown on SOI Substrate[J]. Journal of Semiconductors, 2005, In Press.
Li C B, Mao R W, Zuo Y H, Cheng B W, Yu J Z, Wang Q M. Modulated Photoluminescence of Ge Quantum Dots Grown on SOI Substrate[J]. Chin. J. Semicond., 2005, 26(13): 20.
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Modulated Photoluminescence of Ge Quantum Dots Grown on SOI Substrate
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Abstract
Modulated photoluminescence(PL) of the Ge/Si quantum dots grown on SOI substrates is investigated.The PL spectrum presents multi-peak with different adjacent interval.With the increase of the wavelength,the interval increase.Simulation result indicates that the cavity formed by the mirrors at the surface and the buried SiO2 interface has a modulation effect on the luminescence.And the independence of the peak position on the exciting power also suggests this cavity effect.-
Keywords:
- modulation,
- Ge,
- room temperature PL,
- silicon on insulator
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References
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Proportional views
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