Chin. J. Semicond. > 2000, Volume 21 > Issue 4 > 346-353

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Key words: 硅, 氮化硅, 表面结构, 扫描隧道显微镜, 低能电子衍射

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2000

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      • Received Date: 2015-08-20

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