| Citation: |
Ding Yan, Guo Weiling, Zhu Yanxu, Liu Jianpeng, Yan Weiwei. Rapid thermal annealing effects on vacuum evaporated ITO for InGaN/GaN blue LEDs[J]. Journal of Semiconductors, 2012, 33(6): 066004. doi: 10.1088/1674-4926/33/6/066004
Ding Y, Guo W L, Zhu Y X, Liu J P, Yan W W. Rapid thermal annealing effects on vacuum evaporated ITO for InGaN/GaN blue LEDs[J]. J. Semicond., 2012, 33(6): 066004. doi: 10.1088/1674-4926/33/6/066004.
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Rapid thermal annealing effects on vacuum evaporated ITO for InGaN/GaN blue LEDs
doi: 10.1088/1674-4926/33/6/066004
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Abstract
8 mil × 10 mil InGaN/GaN blue LEDs with indium tin oxide (ITO) emitting at 460 nm were fabricated. A vacuum evaporation technique was adopted to deposit ITO on P-GaN with thickness of 240 nm. The electrical and optical properties of ITO films on P-GaN wafers, as well as rapid thermal annealing (RTA) effects at different temperatures (100 to 550 ℃) were analyzed and compared. It was found that resistivity of 450 ℃ RTA was as low as 1.19 × 10-4 Ω·cm, along with a high transparency of 94.17% at 460 nm. AES analysis indicated the variation of oxygen content after 450 ℃ annealing, and ITO contact resistance showed a minimized value of 3.9 × 10-3 Ω·cm2. With 20 mA current injection, it was found that forward voltage and output power were 3.14 V and 12.57 mW. Furthermore, maximum luminous flux of 0.49 lm of ITO RTA at 550 ℃ was measured, which is the consequence of a higher transparency.-
Keywords:
- rapid thermal annealing
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References
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