Chin. J. Semicond. > 2006, Volume 27 > Issue 5 > 857-863

PAPERS

A Static-State Model of NPT-IGBTs with Localized Lifetime Control

Fang Jian, Jiang Huaping, Qiao Ming, Zhang Bo and Li Zhaoji

+ Author Affiliations

PDF

Abstract: A static-state model of NPT-IGBTs with localized lifetime control is proposed,the results of which fit 2D simulation.With this model,the forward characteristics of localized lifetime control NPT-IGBT influenced by the parameters of localized low-lifetime region are discussed in detail.We also systematically explain why the optimized locations of low-lifetime region are different by different localized lifetime control methods in previous reports.

Key words: localized lifetime controlNPT-IGBTforward voltage dropsconductivity modulation

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2822 Times PDF downloads: 2175 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 May 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Fang Jian, Jiang Huaping, Qiao Ming, Zhang Bo, Li Zhaoji. A Static-State Model of NPT-IGBTs with Localized Lifetime Control[J]. Journal of Semiconductors, 2006, In Press. Fang J, Jiang H P, Qiao M, Zhang B, Li Z J. A Static-State Model of NPT-IGBTs with Localized Lifetime Control[J]. Chin. J. Semicond., 2006, 27(5): 857.Export: BibTex EndNote
      Citation:
      Fang Jian, Jiang Huaping, Qiao Ming, Zhang Bo, Li Zhaoji. A Static-State Model of NPT-IGBTs with Localized Lifetime Control[J]. Journal of Semiconductors, 2006, In Press.

      Fang J, Jiang H P, Qiao M, Zhang B, Li Z J. A Static-State Model of NPT-IGBTs with Localized Lifetime Control[J]. Chin. J. Semicond., 2006, 27(5): 857.
      Export: BibTex EndNote

      A Static-State Model of NPT-IGBTs with Localized Lifetime Control

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return