Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 16-21

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Abstract: A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0~100V is more than 1e11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance.

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using[J]. Journal of Semiconductors, 2005, In Press. Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using[J]. Chin. J. Semicond., 2005, 26(1): 16.Export: BibTex EndNote
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      Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using[J]. Journal of Semiconductors, 2005, In Press.

      Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using[J]. Chin. J. Semicond., 2005, 26(1): 16.
      Export: BibTex EndNote

      Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using

      • Received Date: 2015-08-19

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