INVITED REVIEW PAPERS

Advances and prospects in nitrides based light-emitting-diodes

Jinmin Li1, 2, 3, , Zhe Liu1, 2, 3, Zhiqiang Liu1, 2, 3, Jianchang Yan1, 2, 3, Tongbo Wei1, 2, 3, Xiaoyan Yi1, 2, 3 and Junxi Wang1, 2, 3

+ Author Affiliations

 Corresponding author: Jinmin Li, Email: jmli@semi.ac.cn

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Abstract: Due to their low power consumption, long lifetime and high efficiency, nitrides based white light-emitting-diodes (LEDs) have long been considered to be a promising technology for next generation illumination. In this work, we provide a brief review of the development of GaN based LEDs. Some pioneering and significant experiment results of our group and the overview of the recent progress in this field are presented. We hope it can provide some meaningful information for the development of high efficiency GaN based LEDs and solid-state-lighting.

Key words: nitrideslight-emitting-diodesMOCVDmultiple-quantum-wellp-doping



[1]
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Fig. 1.  (Color online) (a) Spectrum FWHM and (b) maximum EQE of Ⅲ-nitride and Ⅲ-phosphide LEDs[3].

Fig. 2.  (Color online) (a) Schematic of fabrication process flow to create nano-patterns on a sapphire substrate (NPSS). SEM images of the (b) patterned photoresist and (c) wet-etched NPSS. Inset in Figure 2(c) shows line profile of patterns of NPSS by AFM measurement.

Fig. 3.  (Color online) (a) EL spectra and (b) LOP-I-EQE curves of deep UV LEDs grown on NPSS and FSS.

Fig. 4.  The energy band profiles of the C1 and the HH1 at Brillouin zone center for the ground state of conventional rectangular QW and graded QW with and without internal field[15].

Fig. 5.  (Color online) Simulated energy band diagrams and electron-hole wave functions within the active region of the conventional LED and SQW LED[19].

Fig. 6.  Peak wavelength of EL at different injection current levels in InGaN/GaN and InGaN/AlInGaN-MQW based LEDs[20].

Fig. 7.  (Color online) The comparison IQE of (a) d-EBLs LED and (b) conventional LED.

Fig. 8.  (Color online) LOP and EQE as a function of current for samples with a CEBL and a GEBL.

Fig. 9.  (Color online) Schematic illustration of polarization-induced 3DHG in (0001)-oriented metal-face Ⅲ-nitride structure.

Fig. 10.  (Color online) Temperature-dependent Hall-effect measurements for the GaN layer and the graded AlGaN layer.

Fig. 11.  (Color online) (a) Schematic model showing the mechanism of impurity resonant states p-type doping. (b) Evidence for the delocalization characteristics of Mg impurity states.Calculated projected density of states of Mg 2p impurity states and N 2p states.(c) Hole concentration as a function of temperature.The fitting curves are shown as solid lines using a conventional Hall-effect model and a two-carrier-species Hall-effect model.

Fig. 12.  (Color online) (a) Calculated projected density of state of In 4d, N 2p and Mg 2p orbital. (b) Isosurface charge density plots of VBM of In-Mg co-doping GaN at the G point in the planes of N-In-N bonds and N-Ga-N bonds. (c) Hole concentration and mobility as a function of temperature for In-Mg co-doped GaN samples.The fitting curve is shown with a solid line.

Fig. 13.  (Color online) The development of GaN nanostructure by wet etching (a and b) and selective area growth (c and d): (a) wet etching with a thin AlGaN cap[65], (b) wet etching without a thin AlGaN cap[64], (c) selective area growth with high hydrogen content[66]}, and (d) selective area growth with high hydrogen content[67].

Fig. 14.  (Color online) Pyramid array core-shell LED with graphene electrodes. (a) Schematic illustration of the key fabrication procedures (b) SEM image of large-area pyramid core-shell LED fabrication procedures. (c) Room-temperature EL spectra of pyramid array core-shell LED at various current injections. (d) I-V curve of LEDs with multilayer graphene electrode. The inset is a photograph of the light emission from a single LED chip and reversed bias voltage I-V curve[67, 68].

Fig. 15.  Color online) (a)-(c) Schematics of the G-LED fabrication process. (d) Structure of a G-LED.

Fig. 16.  (Color online) (a) Schematics of the nitric acid doping process. (b) Forward I-V curves of VLEDs before and after acid doping. (c) Light output power of VLEDs versus different forward current.

Fig. 17.  (Color online) (a) Schematic diagram of an LED device with graphene/AgNWs hybrid film. (b) Optical image of graphene/AgNWs hybrid film. (c) Light output power of VLEDs versus different forward current. Sheet resistances of bare graphene and graphene/AgNWs hybrid films before and after thermal annealing.

Fig. 18.  (Color online) SEM of GaN films (a) without graphene buffer, and (b) with graphene buffer.

[1]
The Royal Swedish Academy of Sciences. Scientific background on the nobel prize in physics 2014:efficient blue light-emitting diodes leading to bright and energy-saving white light sources, 2014
[2]
Cho J, Schubert E F, Kim J K. Efficiency droop in light-emitting diodes:challenges and countermeasures. Laser & Photonics Reviews, 2013, 7:408
[3]
Bulashevich K A, Kulik A V, Yu S, et al. Optimal ways of color mixing for high-quality, white-light LED sources. Phys Status Solidi A, 2015, 212:914
[4]
Dong Peng, Yan Jianchang, Wang Junxi, et al. 282-nm AlGaNbased deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates. Appl Phys Lett, 2013, 102(24):241113
[5]
Ryou J H, Yoder P D, Liu J P, et al. Control of quantum-confined stark effect in InGaN-based quantum wells. IEEE J Quantum Electron, 2009, 15:1080
[6]
Park S H, Ahn D, Kim J W. High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes. Appl Phys Lett, 2009, 94:041109
[7]
Wang J X, Wang L, Zhao W, et al. Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue lightemitting diodes with different degree of carrier localization. Appl Phys Lett, 2010, 97:201112
[8]
Shin D S, Han D P, Oh J Y, et al. Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization. Appl Phys Lett, 2012, 100:153506
[9]
Park I K, Park S J. Green gap spectral range light-emitting diodes with self-assembled InGaN quantum dots formed by enhanced phase separation. Appl Phys Express, 2011, 4:042102
[10]
Farrell R M, Feezell D F, Schmidt M C, et al. Continuouswave operation of AlGaN-cladding-free nonpolar m-plane In-GaN/GaN laser diodes. Jpn J Appl Phys, 2007, 46:L761
[11]
Sharma R, Pattison P M, Masui H, et al. Demonstration of a semipolar (10(1) over-bar (3) over-bar) InGaN/GaN green light emitting diode. Appl Phys Lett, 2005, 87:231110
[12]
Arif R A, Ee Y K, Tansu N. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Appl Phys Lett, 2007, 91:091110
[13]
Arif R A, Zhao H, Tansu N. Type-Ⅱ InGaN-GaNAs quantum wells for lasers applications. Appl Phys Lett, 2008, 92:011104
[14]
Zhao H, Liu G, Li X, et al. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile. Appl Phys Lett, 2009, 95:061104
[15]
Wang L, Li R, Yang Z, et al. High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well lightemitting diodes. Appl Phys Lett, 2009, 95:211104
[16]
Chang Y A, Kuo Y T, Chang J Y, et al. Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures. Opt Lett, 2012, 37:2205
[17]
Zhao H, Liu G Y, Tansu N. Analysis of InGaN-delta-InN quantum wells for light-emitting diodes. Appl Phys Lett, 2010, 97:131114
[18]
Zhang J, Tansu N. Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for lightemitting diodes. J Appl Phys, 2011, 110:113110
[19]
Li Hongjian, Li Panpan, Kang Junjie, et al. Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well. Appl Phys Express, 2013, 6:052102
[20]
Liu Naixin, Wang Junxi, Yan Jianchang, et al. Characterization of quaternary AlInGaN epilayers and polarization-reduced In-GaN/AlInGaN MQW grown by MOCVD. Journal of Semiconductors, 2009, 30:113003
[21]
Nakamura S. The roles of structural imperfections in InGaNbased blue light-emitting diodes and laser diodes. Science, 1998, 281:956
[22]
Schubert E F, Kim J K. Solid-state light sources getting smart. Science, 2005, 308:1274
[23]
Han S H, Lee D Y, Lee S J, et al. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emittingdiodes. Appl Phys Lett, 2009, 94:231123
[24]
Lee J, Li X, Ni X, et al. On carrier spillover in c-and m-plane InGaN light emitting diodes. Appl Phys Lett, 2009, 95:2011135
[25]
Yen S H, Tsai M C, Tsai M L, et al. Effect of n-type AlGaN layer on carrier transportation and efficiency droop of blue In-GaN light-emitting diodes. IEEE Photonics Technol Lett, 2009, 21:975
[26]
Schubert M F, Xu J, Kim J K. et al. Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop. Appl Phys Lett, 2008, 93:041102
[27]
Min-Ho K, Schubert M F, Qi D, et al. Origin of efficiency droop in GaN-based light-emitting diodes. Appl Phys Lett, 2007, 91:183507
[28]
Kuo Y K, Tsai M C, Yen S H. Numerical simulation of blue In-GaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer. Opt Commun, 2009, 282:4252
[29]
Kim H J, Choi S, Kim S S, et al. Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes. Appl Phys Lett, 2010, 96:101102
[30]
Choi S, Kim H J, Kim S S, et al. Improvement of peak quantum efficiency and efficiency droop in Ⅲ-nitride visible lightemitting diodes with an InAlN electron-blocking layer. Appl Phys Lett, 2010, 96:221105
[31]
Wang C H, Ke C C, Lee C Y, et al. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer. Appl Phys Lett, 2010, 97:261103
[32]
Kuo Y K, Chang J Y, Tsai M C. Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer. Opt Lett, 2010, 35:3285
[33]
Zhang Y, Kao T T, Liu J, et al. Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes. J Appl Phys, 2011, 109:083115
[34]
Guo Yao, Liang Meng, Fu Jiajia, et al. Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers. AIP Adv, 2015, 5:037131
[35]
Ren Peng, Zhang Ning, Liu Zhe, et al. Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer. J Phys D, 2015, 48:045101
[36]
Liu Zhiqiang, Ma Jun, Yi Xiaoyan, et al. p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes. Appl Phys Lett, 2012, 101:261106
[37]
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    Received: 16 May 2016 Revised: Online: Published: 01 June 2016

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      Jinmin Li, Zhe Liu, Zhiqiang Liu, Jianchang Yan, Tongbo Wei, Xiaoyan Yi, Junxi Wang. Advances and prospects in nitrides based light-emitting-diodes[J]. Journal of Semiconductors, 2016, 37(6): 061001. doi: 10.1088/1674-4926/37/6/061001 J M Li, Z Liu, Z Q Liu, J C Yan, T B Wei, X Y Yi, J X Wang. Advances and prospects in nitrides based light-emitting-diodes[J]. J. Semicond., 2016, 37(6): 061001. doi: 10.1088/1674-4926/37/6/061001.Export: BibTex EndNote
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      Jinmin Li, Zhe Liu, Zhiqiang Liu, Jianchang Yan, Tongbo Wei, Xiaoyan Yi, Junxi Wang. Advances and prospects in nitrides based light-emitting-diodes[J]. Journal of Semiconductors, 2016, 37(6): 061001. doi: 10.1088/1674-4926/37/6/061001

      J M Li, Z Liu, Z Q Liu, J C Yan, T B Wei, X Y Yi, J X Wang. Advances and prospects in nitrides based light-emitting-diodes[J]. J. Semicond., 2016, 37(6): 061001. doi: 10.1088/1674-4926/37/6/061001.
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      Advances and prospects in nitrides based light-emitting-diodes

      doi: 10.1088/1674-4926/37/6/061001
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      Project supported by the National High Technology Research and Development Program of China (No. 2013AA03A101).

      the National High Technology Research and Development Program of China No. 2013AA03A101

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      • Corresponding author: Email: jmli@semi.ac.cn
      • Received Date: 2016-05-16
      • Published Date: 2016-06-01

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