Fig. 1.
$P_{\rm f2}$ versus energy and Ge fraction at 300 K. (a) Absorption. (b) Emission
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Zhao Jin, Liping Qiao, Ce Liu, Chen Guo, Lidong Liu, Jiang'an Wang. Inter valley phonon scattering mechanism in strained Si/(101) Si1-xGex[J]. Journal of Semiconductors, 2013, 34(7): 072002. doi: 10.1088/1674-4926/34/7/072002
Z Jin, L P Qiao, C Liu, C Guo, L D Liu, J A Wang. Inter valley phonon scattering mechanism in strained Si/(101) Si1-xGex[J]. J. Semicond., 2013, 34(7): 072002. doi: 10.1088/1674-4926/34/7/072002.
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Inter valley phonon scattering mechanism in strained Si/(101) Si1-xGex
doi: 10.1088/1674-4926/34/7/072002
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Abstract
Inter valley scattering has a great impact on carrier mobility of strained Si materials, so based on Fermi's golden rule and the theory of Boltzmann collision term approximation, inter valley phonon scattering mechanism of electrons in nano scale strained Si (101) materials is established under the influence of both energy and stress. It shows that inter valley phonon f2, f3, g3 scattering rates decrease markedly in nano scale strained Si (101) materials with increasing stress. The quantized models can provide valuable references to the understanding of strained Si materials and the research on electron carrier mobility.-
Keywords:
- inter valley scattering,
- strained Si,
- model
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References
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