| Citation: |
Cai Daolin, Li Ping, Zhai Yahong, Zhang Shuren. Electrical Properties of a PZT Ferroelectric Field Effect Transistor[J]. Journal of Semiconductors, 2007, In Press.
Cai D L, Li P, Zhai Y H, Zhang S R. Electrical Properties of a PZT Ferroelectric Field Effect Transistor[J]. Chin. J. Semicond., 2007, 28(11): 1782.
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Electrical Properties of a PZT Ferroelectric Field Effect Transistor
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Abstract
An n-channel field-effect-transistor (FFET) with a metal/ferroelectric/metal/insulator/Si substrates (MFMIS) structure is fabricated by using a Pb(Zr0.52Ti0.48)O3 (PZT) thin film of the preferential orientation of (111) on Si substrates prepared by the RF magnetron sputtering technique integrated with semiconductor technology.TheC-V characteristics,I-V characteristics,and data writing speed of the FFET are investigated.The clockwise C-V and counterclockwise Id-Vg hysteresis loops of the n-channel FFET demonstrate that the FFET could realize a memory effect due to the ferroelectric polarization of PZT thin film.The memory window of the FFET is 2V,observed from the C-V and Id-Vg hysteresis curves with Vg swinging between -5 and +5V.-
Keywords:
- RF magnetron sputtering,
- MFMIS,
- FFETs,
- memory window
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References
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Proportional views
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