Chin. J. Semicond. > 2005, Volume 26 > Issue 11 > 2191-2195

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A Ku Band HFET MMIC VCO with Source Terminal Tuning

Wang Shaodong, Gao Xuebang, Wu Hongjiang and Wu Ahui

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Abstract: Based on S-parameter and negative impedance analyses,a Ku band HFET MMIC VCO,which is turned at source, is designed and fabricated successfully for the first time.A large signal model is developed to perform nonlinear analysis.A two dimensional impedance sweep is used to determine the output impedance network match in gate and source ports.The measurement results show that a 16dBm output power over a 17.79~17.89GHz frequency range is achieved.

Key words: MMIC VCO HFET GaAs

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2005

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      Wang Shaodong, Gao Xuebang, Wu Hongjiang, Wu Ahui. A Ku Band HFET MMIC VCO with Source Terminal Tuning[J]. Journal of Semiconductors, 2005, In Press. Wang S D, Gao X B, Wu H J, Wu A H. A Ku Band HFET MMIC VCO with Source Terminal Tuning[J]. Chin. J. Semicond., 2005, 26(11): 2191.Export: BibTex EndNote
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      Wang Shaodong, Gao Xuebang, Wu Hongjiang, Wu Ahui. A Ku Band HFET MMIC VCO with Source Terminal Tuning[J]. Journal of Semiconductors, 2005, In Press.

      Wang S D, Gao X B, Wu H J, Wu A H. A Ku Band HFET MMIC VCO with Source Terminal Tuning[J]. Chin. J. Semicond., 2005, 26(11): 2191.
      Export: BibTex EndNote

      A Ku Band HFET MMIC VCO with Source Terminal Tuning

      • Received Date: 2015-08-19

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