Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 41-43

Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio

Zhang Yang, Zeng Yiping, Ma Long, Wang Baoqiang, Zhu Zhanping, Wang Liangchen and Yang Fuhua

+ Author Affiliations

PDF

Abstract: We report InAs/In0.53Ca0.47As/AlAs resonant tunneling diodes(RTDs)grown on InP substrate by molecular beam epitaxy.The peak to valley current ratio of these devices is 19 at 300K.A peak current density of 3kA/crn2 is obtained for RTDs with AlAs barriers of ten monolayers and anIn0.53Ca0.47As well of eight monolayer with a four-monolayer InAs insert layer.

Key words: resonant tunneling diodeInP substratemolecular beam epitaxy

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 1959 Times PDF downloads: 476 Times Cited by: 0 Times

    History

    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhang Yang, Zeng Yiping, Ma Long, Wang Baoqiang, Zhu Zhanping, Wang Liangchen, Yang Fuhua. Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio[J]. Journal of Semiconductors, 2007, In Press. Zhang Y, Zeng Y P, Ma L, Wang B Q, Zhu Z P, Wang L C, Yang F H. Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio[J]. Chin. J. Semicond., 2007, 28(S1): 41.Export: BibTex EndNote
      Citation:
      Zhang Yang, Zeng Yiping, Ma Long, Wang Baoqiang, Zhu Zhanping, Wang Liangchen, Yang Fuhua. Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio[J]. Journal of Semiconductors, 2007, In Press.

      Zhang Y, Zeng Y P, Ma L, Wang B Q, Zhu Z P, Wang L C, Yang F H. Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio[J]. Chin. J. Semicond., 2007, 28(S1): 41.
      Export: BibTex EndNote

      Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return