Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 414-417

Monolithic Integration of Resonant Tunneling Diodes and High Electron Mobility Transistors on InP Substrates

Ma Long, Zhang Yang, Dai Yang, Yang Fuhua, Zeng Yiping and Wang Liangchen

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Abstract: The integrated structures of InGaAs/AIAs resonant tunneling diode(RTD)and InGaAs/InatAs high electron mobility transistor(HEMT) are epitaxially grown by molecular beam epitaxy on semi.insulating InP SUbstrates.The maxi. mum peak·to-valley current ratio(PVCR) of the fabricated RTD is 18.39 at room temperature and the resistive cutoff fre. quency is larger than 20.05GHz.The cutoff frequency and the maximum transconductance for the lmm gate length HEMT are 19.8GHz and 237mS/mm,respectively.The multiple value logic which consists of multiple RTDs connected in series。and the characteristics that HEMT and RTD are in parallel connection are also demonstrated.

Key words: resonant tunneling diodehigh electron mobility transistorInPmonolithic integration

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Ma Long, Zhang Yang, Dai Yang, Yang Fuhua, Zeng Yiping, Wang Liangchen. Monolithic Integration of Resonant Tunneling Diodes and High Electron Mobility Transistors on InP Substrates[J]. Journal of Semiconductors, 2007, In Press. Ma L, Zhang Y, Dai Y, Yang F H, Zeng Y P, Wang L C. Monolithic Integration of Resonant Tunneling Diodes and High Electron Mobility Transistors on InP Substrates[J]. Chin. J. Semicond., 2007, 28(S1): 414.Export: BibTex EndNote
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      Ma Long, Zhang Yang, Dai Yang, Yang Fuhua, Zeng Yiping, Wang Liangchen. Monolithic Integration of Resonant Tunneling Diodes and High Electron Mobility Transistors on InP Substrates[J]. Journal of Semiconductors, 2007, In Press.

      Ma L, Zhang Y, Dai Y, Yang F H, Zeng Y P, Wang L C. Monolithic Integration of Resonant Tunneling Diodes and High Electron Mobility Transistors on InP Substrates[J]. Chin. J. Semicond., 2007, 28(S1): 414.
      Export: BibTex EndNote

      Monolithic Integration of Resonant Tunneling Diodes and High Electron Mobility Transistors on InP Substrates

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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