J. Semicond. > 2016, Volume 37 > Issue 4 > 041001, doi: 10.1088/1674-4926/37/4/041001

INVITED REVIEW PAPERS

Fabrication techniques and applications of flexible graphene-based electronic devices

Luqi Tao1, 2, Danyang Wang1, 2, Song Jiang1, 2, Ying Liu1, 2, Qianyi Xie1, 2, He Tian3, Ningqin Deng1, 2, Xuefeng Wang1, 2, Yi Yang1, 2 and Tianling Ren1, 2,

+ Author Affiliations

 Corresponding author: Ren Tianling,Email:RenTL@tsinghua.edu.cn

PDF

Abstract: In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of flexible circuits, flexible batteries, flexible displays and electronic skins. Graphene-based materials are very promising for flexible electronic devices, due to their high mobility, high elasticity, a tunable band gap, quantum electronic transport and high mechanical strength. In this article, we review the recent progress of the fabrication process and the applications of graphene-based electronic devices, including thermal acoustic devices, thermal rectifiers, graphene-based nanogenerators, pressure sensors and graphene-based light-emitting diodes. In summary, although there are still a lot of challenges needing to be solved, graphene-based materials are very promising for various flexible device applications in the future.

Key words: flexible electronic devices, fabrication process, graphene



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
[66]
[67]
[68]
[69]
[70]
[71]
[72]
[73]
[74]
[75]
[76]
[77]
[78]
[79]
[80]
[81]
[82]
[83]
[84]
[85]
[86]
[87]
[88]
[89]
[90]
[91]
[92]
[93]
[94]
[95]
[96]
[97]
[98]
[99]
[100]
[101]
[102]
[103]
[104]
Fig. 1.  (Color online) (a) A schematic diagram of the fabrication process for SLG-SED. (b) Reproduced with permission from Reference [51].

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) The working principle and characterization of the graphene-based acoustic. (a) The working principle of the graphene-based acoustic. (b) The $I$-$V$ curve of graphene after laser scribing. (c) The Raman spectrum of the graphene film. (d) The sound pressure of the device. Reproduced with permission from Reference [51].

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) (a) The optical photograph of the rGO paper. (b) Surface profile of the rGO paper under SEM. (c) Cross section image of rGO paper under SEM. (d) EDX spectrum of rGO paper. (e) Schematic view of the measure system. (f) Schematic view of the devices. Reproduced with permission from Reference [66].

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) (a) Schematic view of the flexible GONG. (b) Photographs of the GONG. (c) Schematic representation of GONG construction. (d) Photograph of the GO film. (e) Cross section image of GO film under SEM. (f) The surface profile of a GO film. (g) The surface profile of GO film under SEM. Reproduced with permission from Reference [75].

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) The LSG pressure sensor schematic and microstructure. (a) Cross-bar device structure of the pressure sensor based on the foam-like LSG. Inset showing a flexible LSG pressure sensor in hand. (b) Top view SEM image of the LSG surface in false color. (c) The main fabrication processing steps of the LSG pressure sensor. A DVD burner with a laser-scribing function is used to convert GO into LSG. The upper and lower LSG patterns are perpendicular to each other to form a cross-bar structure. The two pieces of LSG are finally packaged face-to-face. (d) The height profile corresponding to the white line in the inset showing that the height and width of the LSG is 10.7 and 19.8 $\mu $m,respectively. (e) Schematic illustration of the sensing mechanism and current changes in response to loading and unloading ($I_{\rm off}$: unloading,$I_{\rm on}$: loading). Reproduced with permission from Reference [79].

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) Schematic diagrams of the fabrication process for flexible graphene-on-PET strain sensors. (a) A PET film is coated on a DVD disc. (b) The GO solution is drop-cast on the DVD disc. (c) The disc is inserted into a Light-Scribe DVD drive and a computer-designed circuit is etched onto the film. The laser inside the drive converts the golden-brown GO into black graphene at precise locations to produce interdigitated graphene circuits. Large areas of precise graphene patterns could be obtained in 20-30 min by the laser scribing technology. (d) Peeling off the PET to obtain wafer-scale flexible graphene-on-PET strain sensors. Reproduced with permission from Reference [95].

DownLoad: Full-Size Img PowerPoint
Fig. 7.  (Color online) The structure and characterization. (a) The structure of the graphene-based LED. (b) Schematic view of flexible LED. (c) Photo-luminescence (PL) spectrum of light-emitting rays. (d) XPS spectra of rGO,GO and the light-emitting layer. (e) Bright red light emission from the LED device. Reproduced with permission from Reference [107].

DownLoad: Full-Size Img PowerPoint
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
[66]
[67]
[68]
[69]
[70]
[71]
[72]
[73]
[74]
[75]
[76]
[77]
[78]
[79]
[80]
[81]
[82]
[83]
[84]
[85]
[86]
[87]
[88]
[89]
[90]
[91]
[92]
[93]
[94]
[95]
[96]
[97]
[98]
[99]
[100]
[101]
[102]
[103]
[104]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 5026 Times PDF downloads: 105 Times Cited by: 0 Times

    History

    Received: 04 December 2015 Revised: Online: Published: 01 April 2016

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2016  >  37(4): 041001
      Luqi Tao, Danyang Wang, Song Jiang, Ying Liu, Qianyi Xie, He Tian, Ningqin Deng, Xuefeng Wang, Yi Yang, Tianling Ren. Fabrication techniques and applications of flexible graphene-based electronic devices[J]. Journal of Semiconductors, 2016, 37(4): 041001. doi: 10.1088/1674-4926/37/4/041001 L Q Tao, D Y Wang, S Jiang, Y Liu, Q Y Xie, H Tian, N Q Deng, X F Wang, Y Yang, T L Ren. Fabrication techniques and applications of flexible graphene-based electronic devices[J]. J. Semicond., 2016, 37(4): 041001. doi: 10.1088/1674-4926/37/4/041001.Export: BibTex EndNote
      Citation:
      Luqi Tao, Danyang Wang, Song Jiang, Ying Liu, Qianyi Xie, He Tian, Ningqin Deng, Xuefeng Wang, Yi Yang, Tianling Ren. Fabrication techniques and applications of flexible graphene-based electronic devices[J]. Journal of Semiconductors, 2016, 37(4): 041001. doi: 10.1088/1674-4926/37/4/041001

      L Q Tao, D Y Wang, S Jiang, Y Liu, Q Y Xie, H Tian, N Q Deng, X F Wang, Y Yang, T L Ren. Fabrication techniques and applications of flexible graphene-based electronic devices[J]. J. Semicond., 2016, 37(4): 041001. doi: 10.1088/1674-4926/37/4/041001.
      Export: BibTex EndNote
      shu

      Fabrication techniques and applications of flexible graphene-based electronic devices

      doi: 10.1088/1674-4926/37/4/041001
      • 1.

        Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • 2.

        Tsinghua National Laboratory for Information Science and Technology(TNList), Tsinghua University, Beijing 100084, China

      • 3.

        Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) Program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and China's Postdoctoral Science Foundation (CPSF).

      More Information
      • Corresponding author: Ren Tianling,Email:RenTL@tsinghua.edu.cn
      • Received Date: 2015-12-04
      • Published Date: 2016-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return