Chin. J. Semicond. > 2007, Volume 28 > Issue 9 > 1482-1487

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Design,Fabrication,and Characterization of a High-Performance Monolithic Triaxial Piezoresistive High-gAccelerometer

Dong Peitao, Li Xinxin, Zhang Kun, Wu Xuezhong, Li Shengyi and Feng Songlin

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Abstract: A silicon machined high-performance monolithic triaxial piezoresistive accelerometer is developed for measurements on the order of 100,000g.A three-beam-mass scheme with tiny beams is developed for the xand yaxial elements,and a three-beam-twin-mass structure is developed for thez axial element.Both of these structures feature high sensitivity and high resonance frequency compared with a conventional cantilever structure or cantilever-mass structure.ANSYS is used to analyze and optically design the accelerometer.The three sensing elements are monolithically integrated by micromachining techniques of double-sided deep etching combined with piezoresistive processes.The middle structure silicon layer is anodic bonded with glass substrate and BCB bonded with a top cap silicon layer for the purpose of plastic packaging to improve the reliability of the accelerometer.A dropping-bar system is used to characterize the accelerometer.The sensitivities in the x,y,and z axes are measured to be 2.28,2.36,and 2.52μV/g,respectively,while the corresponding resonant frequencies are 309,302,and 156kHz.Using a Dongling shock test machine,the nonlinearity is tested by comparison calibration and measured to be 1.4% and 1.8% for the y and z axial elements,respectively.

Key words: silicon micromachining technologytriaxial accelerometerpiezoresistivehigh-gplastic package

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    Received: 18 August 2015 Revised: 13 April 2007 Online: Published: 01 September 2007

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      Dong Peitao, Li Xinxin, Zhang Kun, Wu Xuezhong, Li Shengyi, Feng Songlin. Design,Fabrication,and Characterization of a High-Performance Monolithic Triaxial Piezoresistive High-gAccelerometer[J]. Journal of Semiconductors, 2007, In Press. Dong P T, Li X X, Zhang K, Wu X Z, Li S Y, Feng S L. Design,Fabrication,and Characterization of a High-Performance Monolithic Triaxial Piezoresistive High-gAccelerometer[J]. Chin. J. Semicond., 2007, 28(9): 1482.Export: BibTex EndNote
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      Dong Peitao, Li Xinxin, Zhang Kun, Wu Xuezhong, Li Shengyi, Feng Songlin. Design,Fabrication,and Characterization of a High-Performance Monolithic Triaxial Piezoresistive High-gAccelerometer[J]. Journal of Semiconductors, 2007, In Press.

      Dong P T, Li X X, Zhang K, Wu X Z, Li S Y, Feng S L. Design,Fabrication,and Characterization of a High-Performance Monolithic Triaxial Piezoresistive High-gAccelerometer[J]. Chin. J. Semicond., 2007, 28(9): 1482.
      Export: BibTex EndNote

      Design,Fabrication,and Characterization of a High-Performance Monolithic Triaxial Piezoresistive High-gAccelerometer

      • Received Date: 2015-08-18
      • Accepted Date: 2007-04-09
      • Revised Date: 2007-04-13
      • Published Date: 2007-08-31

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