SEMICONDUCTOR DEVICES

Finite element analysis of expansion-matched submounts for high-power laser diodes packaging

Yuxi Ni, Xiaoyu Ma, Hongqi Jing and Suping Liu

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 Corresponding author: Hongqi Jing, Email: jinghq@semi.ac.cn

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Abstract: In order to improve the output power and increase the lifetime of laser diodes, expansion-matched submounts were investigated by finite element analysis. The submount was designed as sandwiched structure. By varying the vertical structure and material of the middle layer, the thermal expansion behavior on the mounting surface was simulated to obtain the expansion-matched design. In addition, the thermal performance of laser diodes packaged by different submounts was compared. The numerical results showed that, changing the thickness ratio of surface copper to middle layer will lead the stress and junction temperature to the opposite direction. Thus compromise needs to be made in the design of the vertical structure. In addition, the silicon carbide (SiC) is the most promising material candidate for the middle layer among the materials discussed in this paper. The simulated results were aimed at providing guidance for the optimal design of sandwich-structure submounts.

Key words: high-power laser diodescoefficient of thermal expansionthermal managementfinite element analysis



[1]
Zhang Zhike, Liu Yu, Liu Jianguo, et al. Packaging investigation of optoelectronic devices. Journal of Semiconductors, 2015, 36(10):101001
[2]
Jing Hongqi, Zhong Li, Ni Yuxi, et al. Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics. Journal of Semiconductors, 2015, 36(10):102006
[3]
Liu Yang, Leung S Y Y, Wong C K Y, et al. Thermal simulation of flexible LED package enhanced with copper pillars. Journal of Semiconductors, 2015, 36(6):064011
[4]
Paul C, Erbert G, Wenzel H, et al. Efficient high-power laser diodes. IEEE J of Sel Topics Quantum Electron, 2013, 19(4):1501211
[5]
Pliska A C, Mottin J, Matuschek N, et al. Bonding semiconductor laser chips:substrate material figure of merit and die attach layer influence. THERMINIC 2005, 2005:76
[6]
Dirk L, Hennig P. Highly thermally conductive substrates with adjustable CTE for diode laser bar packaging. MEMS/MOEMS:Advances in Photonic Communications, sensing, Metrology, Packaging and Assembly Proc SPIE, 2003, 4945:174
[7]
Liu Xingsheng, Zhao Wei, Xiong Lingling, et al. Packaging high power semiconductor lasers. New York:Springer, 2015
[8]
Schleuning D, Griffin M, James P. Robust hard-solder packaging of conduction cooled laser diode bars. High-Power Diode Laser Technology and Applications V, Proc SPIE, 2007, 6456:645604
[9]
Bezotosnyi V V, Krokhin O N, Oleshchenko, et al. Thermal modelling of high-power laser diodes mounted using various types of submounts. Quantum Electronics, 2014, 44(10):899
[10]
Miller R, Liu D, Horsinka M, et al. Composite-copper, low-thermal-resistance heat sinks for laser-diode bars, mini-bars and single-emitter devices. High-Power Diode Laser Technology and Applications VI, Proc SPIE, 2008, 6876:687607
[11]
Kitzmantel M, Neubauer E. Innovative hybrid heat sink materials with high thermal conductivities and tailored CTE, Components and Packaging for Laser Systems, Proc SPIE, 2015, 9346:934606
[12]
Suhir E. Predictive analytical thermal stress modeling in electronics and photonics. Applied Mechanics Reviews, 2009, 62(4):040801
[13]
Szymański M, Kozlowska A, Malag A, et al. Two-dimensional model of heat flow in broad-area laser diode mounted to a non-ideal heat sink. J Phys D, 2007, 40(3):924
[14]
Hostetler J L, Jiang C L, Negoita V, et al. Thermal and strain characteristics of high-power 940 nm laser arrays mounted with AuSn and In solders. High-Power Diode Laser Technology and Applications V, Proc SPIE, 2007, 6456:645602
[15]
Scholz C, Boucke K, Poprawe R. Mechanical stress-reducing heat sinks for high-power diode lasers. High-Power Diode Laser Technology and Applications Ⅱ, Proc SPIE, 2004, 5336:176
[16]
Szymanski M, Zbroszczyk M, Mroziewicz B. The influence of different heat sources on temperature distributions in broad-area diode lasers. Advanced Optoelectronics and Lasers, Proc SPIE, 2004, 5582:127
Fig. 1.  (Color online) Schematic diagram of the sandwich-structure submount.

Fig. 2.  (Color online) Stress intensity distribution of the assembly (a) before and (b) after secondary level package.

Fig. 3.  Relationship between the CTE at the mounting surface of the submount and copper thickness. Meanwhile, (a) set material of middle layer as SiC, AlN, and Mo respectively, and fix the thickness at 0.3 mm; (b) change the thickness of SiC-middle layer from 0.2 to 0.3 mm, then to 0.4 mm. The straight line parallel to the x-axis indicates the CTE of GaAs (6.03 ppm/K). The open circles stand for structures CTE-matched with GaAs.

Fig. 4.  (Color online) (a) Temperature distribution of the coarse model. (b) Temperature distribution of the submodel.

Fig. 5.  Relationship between the copper thickness and the thermal resistance of the assembly. (a) Setting material of middle layer as SiC, AlN, and Mo respectively. (b) Changing the thickness of SiC middle layer from 0.2 to 0.3, then to 0.4 mm.

Table 1.   Mechanical parameters in simulations.

MaterialCTE (ppm/K)Elastic modulus\par (GPa)Poission's ratioTensile stress (MPa)
GaAs6.0385.30.312-
AuSn16570.405275
In3212.70.451.88
Cu171300.35-
SiC4.24500.21-
AlN4.13080.26-
Mo4.93470.3-
DownLoad: CSV

Table 2.   Detailed data on the structure and parameters of epitaxial layers.

LayerCompositionThickness (μm)Conductivity (W/m·K)
n-contactAu0.4318
n-contactAuGeNi0.2150
substrateGaAs10045
n-claddingAl0.36Ga0.64As1.212.52
n-waveguideAl0.25Ga0.75As0.6515.23
Quantum wellGa0.84In0.16As0.019.898
p-waveguideAl0.25Ga0.75As0.6515.23
p-claddingAl0.36Ga0.64As1.212.52
p-capGaAs0.245
Insulating layerSiO20.21.28
p-contactTi/Pt/Au0.3318
p-contactAu0.4318
SolderAuSn857
Submount-top-layerCuvariable398
Submount-middle-layerSiC300280
Submount-middle-layerAlN300200
Submount-middle-layerMo300142
Submount-bottom-layerCuvariable 398
Solder In1082
F-mountCu2500398
DownLoad: CSV
[1]
Zhang Zhike, Liu Yu, Liu Jianguo, et al. Packaging investigation of optoelectronic devices. Journal of Semiconductors, 2015, 36(10):101001
[2]
Jing Hongqi, Zhong Li, Ni Yuxi, et al. Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics. Journal of Semiconductors, 2015, 36(10):102006
[3]
Liu Yang, Leung S Y Y, Wong C K Y, et al. Thermal simulation of flexible LED package enhanced with copper pillars. Journal of Semiconductors, 2015, 36(6):064011
[4]
Paul C, Erbert G, Wenzel H, et al. Efficient high-power laser diodes. IEEE J of Sel Topics Quantum Electron, 2013, 19(4):1501211
[5]
Pliska A C, Mottin J, Matuschek N, et al. Bonding semiconductor laser chips:substrate material figure of merit and die attach layer influence. THERMINIC 2005, 2005:76
[6]
Dirk L, Hennig P. Highly thermally conductive substrates with adjustable CTE for diode laser bar packaging. MEMS/MOEMS:Advances in Photonic Communications, sensing, Metrology, Packaging and Assembly Proc SPIE, 2003, 4945:174
[7]
Liu Xingsheng, Zhao Wei, Xiong Lingling, et al. Packaging high power semiconductor lasers. New York:Springer, 2015
[8]
Schleuning D, Griffin M, James P. Robust hard-solder packaging of conduction cooled laser diode bars. High-Power Diode Laser Technology and Applications V, Proc SPIE, 2007, 6456:645604
[9]
Bezotosnyi V V, Krokhin O N, Oleshchenko, et al. Thermal modelling of high-power laser diodes mounted using various types of submounts. Quantum Electronics, 2014, 44(10):899
[10]
Miller R, Liu D, Horsinka M, et al. Composite-copper, low-thermal-resistance heat sinks for laser-diode bars, mini-bars and single-emitter devices. High-Power Diode Laser Technology and Applications VI, Proc SPIE, 2008, 6876:687607
[11]
Kitzmantel M, Neubauer E. Innovative hybrid heat sink materials with high thermal conductivities and tailored CTE, Components and Packaging for Laser Systems, Proc SPIE, 2015, 9346:934606
[12]
Suhir E. Predictive analytical thermal stress modeling in electronics and photonics. Applied Mechanics Reviews, 2009, 62(4):040801
[13]
Szymański M, Kozlowska A, Malag A, et al. Two-dimensional model of heat flow in broad-area laser diode mounted to a non-ideal heat sink. J Phys D, 2007, 40(3):924
[14]
Hostetler J L, Jiang C L, Negoita V, et al. Thermal and strain characteristics of high-power 940 nm laser arrays mounted with AuSn and In solders. High-Power Diode Laser Technology and Applications V, Proc SPIE, 2007, 6456:645602
[15]
Scholz C, Boucke K, Poprawe R. Mechanical stress-reducing heat sinks for high-power diode lasers. High-Power Diode Laser Technology and Applications Ⅱ, Proc SPIE, 2004, 5336:176
[16]
Szymanski M, Zbroszczyk M, Mroziewicz B. The influence of different heat sources on temperature distributions in broad-area diode lasers. Advanced Optoelectronics and Lasers, Proc SPIE, 2004, 5582:127
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    Received: 12 October 2015 Revised: 13 January 2016 Online: Published: 01 June 2016

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      Yuxi Ni, Xiaoyu Ma, Hongqi Jing, Suping Liu. Finite element analysis of expansion-matched submounts for high-power laser diodes packaging[J]. Journal of Semiconductors, 2016, 37(6): 064005. doi: 10.1088/1674-4926/37/6/064005 Y X Ni, X Y Ma, H Q Jing, S P Liu. Finite element analysis of expansion-matched submounts for high-power laser diodes packaging[J]. J. Semicond., 2016, 37(6): 064005. doi: 10.1088/1674-4926/37/6/064005.Export: BibTex EndNote
      Citation:
      Yuxi Ni, Xiaoyu Ma, Hongqi Jing, Suping Liu. Finite element analysis of expansion-matched submounts for high-power laser diodes packaging[J]. Journal of Semiconductors, 2016, 37(6): 064005. doi: 10.1088/1674-4926/37/6/064005

      Y X Ni, X Y Ma, H Q Jing, S P Liu. Finite element analysis of expansion-matched submounts for high-power laser diodes packaging[J]. J. Semicond., 2016, 37(6): 064005. doi: 10.1088/1674-4926/37/6/064005.
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      Finite element analysis of expansion-matched submounts for high-power laser diodes packaging

      doi: 10.1088/1674-4926/37/6/064005
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      • Corresponding author: Email: jinghq@semi.ac.cn
      • Received Date: 2015-10-12
      • Revised Date: 2016-01-13
      • Published Date: 2016-06-01

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