| Citation: |
Gao Yong, Sun Liwei, Yang Yuan, Liu Jing. Characteristics of Double-Gate, Dual-Strained-Channel, Fully-Depleted SOI MOSFETs[J]. Journal of Semiconductors, 2008, In Press.
Gao Y, Sun L W, Yang Y, Liu J. Characteristics of Double-Gate, Dual-Strained-Channel, Fully-Depleted SOI MOSFETs[J]. J. Semicond., 2008, 29(2): 338.
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Characteristics of Double-Gate, Dual-Strained-Channel, Fully-Depleted SOI MOSFETs
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Abstract
A novel fully-depleted SOI device structure with a double-gate and dual-strained channel is presented.The electrical characteristics of this device with the effective gate length scaled down to 25nm are simulated.When the Ge content reaches 30%, by the adoption of a single-gate (SG) control mechanism, the drive currents are improved by 43% and 67%, respectively, for the strained-Si n-MOSFET and the strained-SiGe p-MOSFET over their unstrained counterparts.By adopting double-gate (DG) control mechanisms, the similar enhancements are 31% and 60%, respectively.The simulation results show that the DG MOSFETs exhibit a steeper subthreshold slop, a higher transconductance, and a stronger capacity to restrict short-channel-effects over SG MOSFETs.The new structure can be achieved with today’s semiconductor manufacturing level.-
Keywords:
- double-gate,
- dual-strained-channel,
- short channel effects
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