| Citation: |
Wang Xiantai, Shen Huajun, Jin Zhi, Chen Yanhu, Liu Xinyu. A 6 GHz high power and low phase noise VCO using an InGaP/GaAs HBT[J]. Journal of Semiconductors, 2009, 30(2): 025005. doi: 10.1088/1674-4926/30/2/025005
Wang X T, Shen H J, Jin Z, Chen Y H, Liu X Y. A 6 GHz high power and low phase noise VCO using an InGaP/GaAs HBT[J]. J. Semicond., 2009, 30(2): 025005. doi: 10.1088/1674-4926/30/2/025005.
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A 6 GHz high power and low phase noise VCO using an InGaP/GaAs HBT
doi: 10.1088/1674-4926/30/2/025005
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Abstract
A 6 GHz voltage controlled oscillator (VCO) optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance (Neg-R) method, utilizing an InGaP/GaAs hetero-junction bipolar transistor in the negative-resistance block. A proper output matching network and a high Q stripe line resonator were used to enhance output power and depress phase noise. Measured central frequency of the VCO was 6.008 GHz. The tuning range was more than 200 MHz. At the central frequency, an output power of 9.8 dBm and phase noise of –122.33 dBc/Hz at 1 MHz offset were achieved, the calculated RF to DC efficiency was about 14%, and the figure of merit was –179.2 dBc/Hz.-
Keywords:
- VCO
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References
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Proportional views
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