| Citation: |
Luo Xiaorong, Li Zhaoji, Zhang Bo. A Highly Heat-Dissipating SOI High Voltage Power Device with a Variable k Dielectric Buried Layer[J]. Journal of Semiconductors, 2006, In Press.
Luo X R, Li Z J, Zhang B. A Highly Heat-Dissipating SOI High Voltage Power Device with a Variable k Dielectric Buried Layer[J]. Chin. J. Semicond., 2006, 27(10): 1832.
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A Highly Heat-Dissipating SOI High Voltage Power Device with a Variable k Dielectric Buried Layer
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Abstract
Aiming at two main problems of SOI device--the low vertical breakdown voltage and self-heating effect--a novel SOI high-voltage power device with a variable-k dielectric layer (VkD) is proposed.A low-k dielectric is used to enhance the electric field of the buried layer on the drain side with a high electric field,and a high-thermal conductivity dielectric is used near the source side where the current density is large.The device thus can sustain a high voltage while simultaneously reducing the self-heating effect simultaneously.The results show that an electric field in the buried layer of 212V/μm and a breakdown voltage of 255V can be obtained for a VkD structure with a 2μm-thick Si layer and a 1μm buried layer with low k1=2.Compared with conventional SOI,the electric field of the buried layer and breakdown voltage of the VkD SOI are enhanced by 66% and 43%,respectively.The maximum temperature of the device is lowered by 52%. -
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