SEMICONDUCTOR DEVICES

A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

Sanjoy Deb, Saptarsi Ghosh, N Basanta Singh, A K De and Subir Kumar Sarkar

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Abstract: A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs. Different short channel field effects, such as fringing fields, junction-induced lateral fields and substrate fields, are carefully investigated, and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model. Through analytical model-based simulation, the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter variations. Results of analytical simulation are compared with the results of the ATLAS 2D physics-based simulator for verification of the analytical model. The performance of an SON MOSFET is found to be significantly different from a conventional SOI MOSFET. The short channel effects are found to be reduced in an SON, thereby resulting in a lower threshold voltage roll-off and a smaller subthreshold slope. This type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices.

Key words: silicon-on-insulator silicon-on-nothing Poisson’s equation short channel effects threshold voltage roll-off subthreshold slope

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    Received: 03 December 2014 Revised: 13 June 2011 Online: Published: 01 October 2011

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      Sanjoy Deb, Saptarsi Ghosh, N Basanta Singh, A K De, Subir Kumar Sarkar. A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs[J]. Journal of Semiconductors, 2011, 32(10): 104001. doi: 10.1088/1674-4926/32/10/104001 S Deb, S Ghosh, N B Singh, A K De, S K Sarkar. A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs[J]. J. Semicond., 2011, 32(10): 104001. doi:  10.1088/1674-4926/32/10/104001.Export: BibTex EndNote
      Citation:
      Sanjoy Deb, Saptarsi Ghosh, N Basanta Singh, A K De, Subir Kumar Sarkar. A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs[J]. Journal of Semiconductors, 2011, 32(10): 104001. doi: 10.1088/1674-4926/32/10/104001

      S Deb, S Ghosh, N B Singh, A K De, S K Sarkar. A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs[J]. J. Semicond., 2011, 32(10): 104001. doi:  10.1088/1674-4926/32/10/104001.
      Export: BibTex EndNote

      A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

      doi: 10.1088/1674-4926/32/10/104001
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      Sanjoy Deb thankfully acknowledges the financial support obtained from School of Material Science and Nanotechnology, Jadavpur University in the form of UGC Fellowship

      • Received Date: 2014-12-03
      • Accepted Date: 2011-01-17
      • Revised Date: 2011-06-13
      • Published Date: 2011-09-20

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