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Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters

Zheng Huaiwen, Zhang Yiyun, Yang Hua, Xue Bin, Wu Kui, Li Jing and Wang Guohong

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Abstract: A simple and low cost method is described which improves extraction efficiency. The indium tin oxide (ITO) textured film was fabricated by using the self-assembly method and dry-etching. The surface morphologies and surface roughness were observed by using an atomic force microscope. The I-V characteristics, output power and polar radiation pattern of the LEDs with and without textured ITO were measured for comparison. Cylinders and craters were formed on the ITO surface after the etching, the height of which increased with etching time. The output power of the devices is proportional to the etching time. Total internal reflection of light on the ITO-GaN interface is reduced due to the appearance of cylinders and craters, and their increasing height. Thus, the output power is improved.

Key words: indium tin oxide

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    Received: 20 August 2015 Revised: 19 December 2011 Online: Published: 01 May 2012

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      Zheng Huaiwen, Zhang Yiyun, Yang Hua, Xue Bin, Wu Kui, Li Jing, Wang Guohong. Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters[J]. Journal of Semiconductors, 2012, 33(5): 054009. doi: 10.1088/1674-4926/33/5/054009 Zheng H W, Zhang Y Y, Yang H, Xue B, Wu K, Li J, Wang G H. Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters[J]. J. Semicond., 2012, 33(5): 054009. doi: 10.1088/1674-4926/33/5/054009.Export: BibTex EndNote
      Citation:
      Zheng Huaiwen, Zhang Yiyun, Yang Hua, Xue Bin, Wu Kui, Li Jing, Wang Guohong. Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters[J]. Journal of Semiconductors, 2012, 33(5): 054009. doi: 10.1088/1674-4926/33/5/054009

      Zheng H W, Zhang Y Y, Yang H, Xue B, Wu K, Li J, Wang G H. Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters[J]. J. Semicond., 2012, 33(5): 054009. doi: 10.1088/1674-4926/33/5/054009.
      Export: BibTex EndNote

      Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters

      doi: 10.1088/1674-4926/33/5/054009
      Funds:

      The National High Technology Research and Development Program of China (863 Program)86 “2011AA03A107”

      • Received Date: 2015-08-20
      • Accepted Date: 2011-10-29
      • Revised Date: 2011-12-19
      • Published Date: 2012-04-11

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