J. Semicond. > 2008, Volume 29 > Issue 6 > 1156-1159
|

PAPERS

High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs

Zhang Guoyu, Xiu Xiangqian, Zhang Rong, Tao Zhikuo, Cui Xugao, Zhang Jiachen, Xie Zili, Xu Xiaonong and Zheng Youdou

+ Author Affiliations

PDF

Abstract: High-pressure and high-temperature are used to treat a series of Co doped ZnO samples synthesized by Sol-gel method.Structure and composition analyses suggest that CoO is formed after increasing the Co concentration under the high-pressure condition.The results of magnetism measurements by SQUID show that all the samples have room-temperature ferromagnetism and the ferromagnetism increases as the Co doping concentration increases,despite the formation of antiferromagnetic CoO under the high pressure condition.Thus,we argue that the ferromagnetism of ZnCoO is intrinsic.

Key words: high-pressure, high-temperature, ZnO DMS

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2833 Times PDF downloads: 1468 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 11 January 2008 Online: Published: 01 June 2008

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2008  >  29(6): 1156-1159
      Zhang Guoyu, Xiu Xiangqian, Zhang Rong, Tao Zhikuo, Cui Xugao, Zhang Jiachen, Xie Zili, Xu Xiaonong, Zheng Youdou. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. Journal of Semiconductors, 2008, In Press. Zhang G Y, Xiu X Q, Zhang R, Tao Z K, Cui X G, Zhang J C, Xie Z L, Xu X N, Zheng Y D. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. J. Semicond., 2008, 29(6): 1156.Export: BibTex EndNote
      Citation:
      Zhang Guoyu, Xiu Xiangqian, Zhang Rong, Tao Zhikuo, Cui Xugao, Zhang Jiachen, Xie Zili, Xu Xiaonong, Zheng Youdou. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. Journal of Semiconductors, 2008, In Press.

      Zhang G Y, Xiu X Q, Zhang R, Tao Z K, Cui X G, Zhang J C, Xie Z L, Xu X N, Zheng Y D. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. J. Semicond., 2008, 29(6): 1156.
      Export: BibTex EndNote
      shu

      High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-19
      • Revised Date: 2008-01-11
      • Published Date: 2008-06-05

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return