SEMICONDUCTOR PHYSICS

Electrical properties of Ge:Ga near the metal-insulator transition

M Errai1, A El Kaaouachi1 and H El Idrissi2

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 Corresponding author: A El Kaaouachi, Email: errai2013@gmail.com

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Abstract: The results of the metal-insulator transition (MIT) induced by impurity concentration are presented in the case of metallic and insulating samples 70Ge:Ga p-type. The eight samples studied have Ga concentrations N ranging from 1.848 × 1017 to 1.912 × 1017cm-3. The conductivity measurements were carried out at low temperature in the range 1 to 0.019 K. We provide physical explanations to explain the behaviors of the temperature dependence of the electrical conductivity in both sides of the MIT. The data are for a 70Ge:Ga sample prepared and reported by Itoh et al. in Ref. [Itoh K M, Watanabe M, Ootuka Y, et al. J Phys Soc Jpn, 2004, 73(1): 173].

Key words: 70Ge: Ga semiconductorlow temperatureimpurity concentrationmetal-insulatorvariable range hopping conductivitytransport properties



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Fig. 1.  Zero-field conductivities plotted as a function of $T^{1/2}$ for the eight $^{70}$Ge:Ga samples. As mentioned above,we have reanalyzed experimental data obtained in Reference [21].

Fig. 2.  The variation of the conductivity $\sigma $ as a function of $T^{1/2}$ for the metallic samples 1,2 and 3.

Fig. 3.  The variation of the conductivity $\sigma$ as a function of $T^{1/3}$ for the metallic samples 1,2 and 3.

Fig. 4.  Percentage deviation Dev (%) versus exponent $s$ in Equation (1) for the three metallic samples,for sample 1 with a minimum close to 1/2. However,for the two samples 2 and 3 the minimum is close to 1/3.

Fig. 5.  ln$(\sigma ( {N,T}))$ against $T^{-1/4}$ for insulating samples 4-8.

Fig. 6.  ln$(\sigma ( {N,T}))$ against $T^{-1/2}$ for insulating samples 4-8.

Fig. 7.  Function $w(T)$ versus ln$T$ in Equation (2) for insulating samples 4 and 5.

Fig. 8.  Function $w(T)$ versus ln$T$ in Equation (2) for insulating samples 6,7 and 8.

Fig. 9.  Percentage deviation Dev (%) versus exponent $p$ in Equation (2) for the samples 4 and 5.

Fig. 10.  Percentage deviation Dev (%) versus exponent $p$ in Equation (2) for the samples 6,7 and 8.

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    Received: 18 November 2014 Revised: Online: Published: 01 June 2015

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      M Errai, A El Kaaouachi, H El Idrissi. Electrical properties of Ge:Ga near the metal-insulator transition[J]. Journal of Semiconductors, 2015, 36(6): 062001. doi: 10.1088/1674-4926/36/6/062001 M Errai, A E Kaaouachi, H E Idrissi. Electrical properties of Ge:Ga near the metal-insulator transition[J]. J. Semicond., 2015, 36(6): 062001. doi:  10.1088/1674-4926/36/6/062001.Export: BibTex EndNote
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      M Errai, A El Kaaouachi, H El Idrissi. Electrical properties of Ge:Ga near the metal-insulator transition[J]. Journal of Semiconductors, 2015, 36(6): 062001. doi: 10.1088/1674-4926/36/6/062001

      M Errai, A E Kaaouachi, H E Idrissi. Electrical properties of Ge:Ga near the metal-insulator transition[J]. J. Semicond., 2015, 36(6): 062001. doi:  10.1088/1674-4926/36/6/062001.
      Export: BibTex EndNote

      Electrical properties of Ge:Ga near the metal-insulator transition

      doi: 10.1088/1674-4926/36/6/062001
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      • Corresponding author: Email: errai2013@gmail.com
      • Received Date: 2014-11-18
      • Accepted Date: 2015-01-02
      • Published Date: 2015-01-25

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